Thermal distributions of surface states causing the current collapse in unpassivated AlGaN ∕ GaN heterostructure field-effect transistors

The dc characteristics of the AlGaN ∕ GaN heterostructure field-effect transistors were examined at temperatures ranging from 25 to 260°C under white light illumination. Drain current collapse measured was defined by the difference of drain current between light on and light off at V gs = 1 V and V ds = 5 V . The surface-passivated device showed no drain current collapse, but the unpassivated device showed severe drain current collapse at 25°C. Drain current and drain current collapse with an increase in temperature reduced, which resulted from the reduction of the electron mobility or saturation velocity and the thermal activation of the trapped electrons, respectively. Eventually, drain current collapse disappeared completely above 250°C. The behavior of the temperature-dependent drain current collapse showed that the surface states for trapping electrons were continuously distributed with the temperature not having specific energy states.