Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

We report on the InGaN multiquantum laser diodes (LDs) made by rf plasma-assisted molecular beam epitaxy (PAMBE). The laser operation at 408 nm is demonstrated at room temperature with pulsed current injections using 50 ns pulses at 0.25% duty cycle. The threshold current density and voltage for the...

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Veröffentlicht in:	Applied physics letters 2005-01, Vol.86 (1), p.011114-011114-3
Hauptverfasser:	Skierbiszewski, C., Wasilewski, Z. R., Siekacz, M., Feduniewicz, A., Perlin, P., Wisniewski, P., Borysiuk, J., Grzegory, I., Leszczynski, M., Suski, T., Porowski, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	CRYSTAL GROWTH CURRENT DENSITY DEPOSITION DISLOCATIONS ELECTRIC POTENTIAL GALLIUM NITRIDES INDIUM COMPOUNDS LASERS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY PHOTOLUMINESCENCE PLASMA PULSES QUANTUM WELLS SEMICONDUCTOR MATERIALS SUBSTRATES TEMPERATURE RANGE 0273-0400 K THRESHOLD CURRENT VAPOR PHASE EPITAXY
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