Spin polarization and barrier-oxidation effects at the Co ∕alumina interface in magnetic tunnel junctions

The electronic structure and polarization in magnetic tunnel junctions prepared with varying degrees of barrier-layer oxidation have been studied using x-ray absorption spectroscopy across the Co L 2 , 3 absorption edges. It was found that the Co electronic structure near the Co ∕alumina interface t...

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Veröffentlicht in:Applied physics letters 2004-10, Vol.85 (17), p.3803-3805
Hauptverfasser: Telling, N. D., van der Laan, G., Ladak, S., Hicken, R. J.
Format: Artikel
Sprache:eng
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Zusammenfassung:The electronic structure and polarization in magnetic tunnel junctions prepared with varying degrees of barrier-layer oxidation have been studied using x-ray absorption spectroscopy across the Co L 2 , 3 absorption edges. It was found that the Co electronic structure near the Co ∕alumina interface tended to that of cobalt oxide as the barrier oxidation time was increased. However, the net Co 3 d spin polarization, determined from x-ray magnetic circular dichroism, increased for moderate oxidation times compared to that obtained for an under-oxidized Co ∕ Al interface. It is proposed that the expected dilution of the measured polarization due to the formation of (room temperature) paramagnetic cobalt oxide, is offset by an increase in the Co 3 d spin-polarization of the interface layer as the interface bonding changes from Co - Al to Co - O with increasing oxidation times.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1812383