Spin polarization and barrier-oxidation effects at the Co ∕alumina interface in magnetic tunnel junctions
The electronic structure and polarization in magnetic tunnel junctions prepared with varying degrees of barrier-layer oxidation have been studied using x-ray absorption spectroscopy across the Co L 2 , 3 absorption edges. It was found that the Co electronic structure near the Co ∕alumina interface t...
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Veröffentlicht in: | Applied physics letters 2004-10, Vol.85 (17), p.3803-3805 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The electronic structure and polarization in magnetic tunnel junctions prepared with varying degrees of barrier-layer oxidation have been studied using x-ray absorption spectroscopy across the
Co
L
2
,
3
absorption edges. It was found that the
Co
electronic structure near the
Co
∕alumina interface tended to that of cobalt oxide as the barrier oxidation time was increased. However, the net
Co
3
d
spin polarization, determined from x-ray magnetic circular dichroism, increased for moderate oxidation times compared to that obtained for an under-oxidized
Co
∕
Al
interface. It is proposed that the expected dilution of the measured polarization due to the formation of (room temperature) paramagnetic cobalt oxide, is offset by an increase in the
Co
3
d
spin-polarization of the interface layer as the interface bonding changes from
Co
-
Al
to
Co
-
O
with increasing oxidation times. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1812383 |