Structural and interface properties of an AlN diamond ultraviolet light emitting diode

Two practically fully relaxed AlN domains were identified by x-ray diffractometry for AlN grown on (100) diamond. The epitaxial orientation relationships ( 0001 ) [ 10 1 ¯ 0 ] Al N I || ( 100 ) [ 011 ] diamond for the predominant AlN domain (type I) and ( 0001 ) [ 1 ¯ 2 1 ¯ 0 ] Al N II || ( 100 ) [...

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Veröffentlicht in:	Applied physics letters 2004-10, Vol.85 (17), p.3699-3701
Hauptverfasser:	Miskys, C. R., Garrido, J. A., Hermann, M., Eickhoff, M., Nebel, C. E., Stutzmann, M., Vogg, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM NITRIDES DIAMONDS ELECTRIC POTENTIAL ELECTROLUMINESCENCE INTERFACES LAYERS LIGHT EMITTING DIODES MATERIALS SCIENCE MOLECULAR BEAM EPITAXY MORPHOLOGY PHOTOCONDUCTIVITY SEMICONDUCTOR MATERIALS SURFACES ULTRAVIOLET RADIATION X-RAY DIFFRACTION
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