Structural and interface properties of an AlN diamond ultraviolet light emitting diode

Structural and interface properties of an AlN diamond ultraviolet light emitting diode

Two practically fully relaxed AlN domains were identified by x-ray diffractometry for AlN grown on (100) diamond. The epitaxial orientation relationships ( 0001 ) [ 10 1 ¯ 0 ] Al N I || ( 100 ) [ 011 ] diamond for the predominant AlN domain (type I) and ( 0001 ) [ 1 ¯ 2 1 ¯ 0 ] Al N II || ( 100 ) [...

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Veröffentlicht in:Applied physics letters 2004-10, Vol.85 (17), p.3699-3701
Hauptverfasser: Miskys, C. R., Garrido, J. A., Hermann, M., Eickhoff, M., Nebel, C. E., Stutzmann, M., Vogg, G.
Format: Artikel
Sprache:eng
Schlagworte:
ALUMINIUM NITRIDES
DIAMONDS
ELECTRIC POTENTIAL
ELECTROLUMINESCENCE
INTERFACES
LAYERS
LIGHT EMITTING DIODES
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
MORPHOLOGY
PHOTOCONDUCTIVITY
SEMICONDUCTOR MATERIALS
SURFACES
ULTRAVIOLET RADIATION
X-RAY DIFFRACTION
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Zusammenfassung:Two practically fully relaxed AlN domains were identified by x-ray diffractometry for AlN grown on (100) diamond. The epitaxial orientation relationships ( 0001 ) [ 10 1 ¯ 0 ] Al N I || ( 100 ) [ 011 ] diamond for the predominant AlN domain (type I) and ( 0001 ) [ 1 ¯ 2 1 ¯ 0 ] Al N II || ( 100 ) [ 011 ] diamond for the second domain (type II) are obtained. Surface morphology measurements corroborate the good structural quality of the AlN film. In addition, the intrinsic built-in voltage of a n - Al N ∕ p -diamond diode was determined as 1.15 V . By spectrally resolved photocurrent measurements, the ultraviolet electroluminescence emission was confirmed to originate at the heterojunction interface, and is most probably due to a defect center.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1811382