Structural and interface properties of an AlN diamond ultraviolet light emitting diode
Two practically fully relaxed AlN domains were identified by x-ray diffractometry for AlN grown on (100) diamond. The epitaxial orientation relationships ( 0001 ) [ 10 1 ¯ 0 ] Al N I || ( 100 ) [ 011 ] diamond for the predominant AlN domain (type I) and ( 0001 ) [ 1 ¯ 2 1 ¯ 0 ] Al N II || ( 100 ) [...
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| Veröffentlicht in: | Applied physics letters 2004-10, Vol.85 (17), p.3699-3701 |
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| container_title | Applied physics letters |
| container_volume | 85 |
| creator | Miskys, C. R. Garrido, J. A. Hermann, M. Eickhoff, M. Nebel, C. E. Stutzmann, M. Vogg, G. |
| description | Two practically fully relaxed AlN domains were identified by x-ray diffractometry for AlN grown on (100) diamond. The epitaxial orientation relationships
(
0001
)
[
10
1
¯
0
]
Al
N
I
||
(
100
)
[
011
]
diamond for the predominant AlN domain (type I) and
(
0001
)
[
1
¯
2
1
¯
0
]
Al
N
II
||
(
100
)
[
011
]
diamond for the second domain (type II) are obtained. Surface morphology measurements corroborate the good structural quality of the AlN film. In addition, the intrinsic built-in voltage of a
n
-
Al
N
∕
p
-diamond diode was determined as
1.15
V
. By spectrally resolved photocurrent measurements, the ultraviolet electroluminescence emission was confirmed to originate at the heterojunction interface, and is most probably due to a defect center. |
| doi_str_mv | 10.1063/1.1811382 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_20634365</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c376t-3b70eee0ac44af2eb559e29422835d2dd855cc3cf369aec92c9b09a9a1ced7433</originalsourceid><addsrcrecordid>eNp10E1LAzEQgOEgCtbqwX8Q8ORha5LZ7G4uQil-QdGDH9eQZmfbyHZTklTw35vagidPwzAPc3gJueRswlkFN3zCG86hEUdkxFldF8B5c0xGjDEoKiX5KTmL8TOvUgCMyMdrClubtsH01AwtdUPC0BmLdBP8BkNyGKnv8o1O-2faOrP2mW37FMyX8z0m2rvlKlFcu5TcsMzEt3hOTjrTR7w4zDF5v797mz0W85eHp9l0Xlioq1TAomaIyIwtS9MJXEipUKhSiAZkK9q2kdJasB1UyqBVwqoFU0YZbrGtS4Axudr_9TE5Ha1LaFfWDwPapEUOUkIls7reKxt8jAE7vQlubcK35kzvsmmuD9myvd3b3TOTnB_-x3_tdG6nf9vBDwupddA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Structural and interface properties of an AlN diamond ultraviolet light emitting diode</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Miskys, C. R. ; Garrido, J. A. ; Hermann, M. ; Eickhoff, M. ; Nebel, C. E. ; Stutzmann, M. ; Vogg, G.</creator><creatorcontrib>Miskys, C. R. ; Garrido, J. A. ; Hermann, M. ; Eickhoff, M. ; Nebel, C. E. ; Stutzmann, M. ; Vogg, G.</creatorcontrib><description>Two practically fully relaxed AlN domains were identified by x-ray diffractometry for AlN grown on (100) diamond. The epitaxial orientation relationships
(
0001
)
[
10
1
¯
0
]
Al
N
I
||
(
100
)
[
011
]
diamond for the predominant AlN domain (type I) and
(
0001
)
[
1
¯
2
1
¯
0
]
Al
N
II
||
(
100
)
[
011
]
diamond for the second domain (type II) are obtained. Surface morphology measurements corroborate the good structural quality of the AlN film. In addition, the intrinsic built-in voltage of a
n
-
Al
N
∕
p
-diamond diode was determined as
1.15
V
. By spectrally resolved photocurrent measurements, the ultraviolet electroluminescence emission was confirmed to originate at the heterojunction interface, and is most probably due to a defect center.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1811382</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ALUMINIUM NITRIDES ; DIAMONDS ; ELECTRIC POTENTIAL ; ELECTROLUMINESCENCE ; INTERFACES ; LAYERS ; LIGHT EMITTING DIODES ; MATERIALS SCIENCE ; MOLECULAR BEAM EPITAXY ; MORPHOLOGY ; PHOTOCONDUCTIVITY ; SEMICONDUCTOR MATERIALS ; SURFACES ; ULTRAVIOLET RADIATION ; X-RAY DIFFRACTION</subject><ispartof>Applied physics letters, 2004-10, Vol.85 (17), p.3699-3701</ispartof><rights>2004 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c376t-3b70eee0ac44af2eb559e29422835d2dd855cc3cf369aec92c9b09a9a1ced7433</citedby><cites>FETCH-LOGICAL-c376t-3b70eee0ac44af2eb559e29422835d2dd855cc3cf369aec92c9b09a9a1ced7433</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20634365$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Miskys, C. R.</creatorcontrib><creatorcontrib>Garrido, J. A.</creatorcontrib><creatorcontrib>Hermann, M.</creatorcontrib><creatorcontrib>Eickhoff, M.</creatorcontrib><creatorcontrib>Nebel, C. E.</creatorcontrib><creatorcontrib>Stutzmann, M.</creatorcontrib><creatorcontrib>Vogg, G.</creatorcontrib><title>Structural and interface properties of an AlN diamond ultraviolet light emitting diode</title><title>Applied physics letters</title><description>Two practically fully relaxed AlN domains were identified by x-ray diffractometry for AlN grown on (100) diamond. The epitaxial orientation relationships
(
0001
)
[
10
1
¯
0
]
Al
N
I
||
(
100
)
[
011
]
diamond for the predominant AlN domain (type I) and
(
0001
)
[
1
¯
2
1
¯
0
]
Al
N
II
||
(
100
)
[
011
]
diamond for the second domain (type II) are obtained. Surface morphology measurements corroborate the good structural quality of the AlN film. In addition, the intrinsic built-in voltage of a
n
-
Al
N
∕
p
-diamond diode was determined as
1.15
V
. By spectrally resolved photocurrent measurements, the ultraviolet electroluminescence emission was confirmed to originate at the heterojunction interface, and is most probably due to a defect center.</description><subject>ALUMINIUM NITRIDES</subject><subject>DIAMONDS</subject><subject>ELECTRIC POTENTIAL</subject><subject>ELECTROLUMINESCENCE</subject><subject>INTERFACES</subject><subject>LAYERS</subject><subject>LIGHT EMITTING DIODES</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>MORPHOLOGY</subject><subject>PHOTOCONDUCTIVITY</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SURFACES</subject><subject>ULTRAVIOLET RADIATION</subject><subject>X-RAY DIFFRACTION</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNp10E1LAzEQgOEgCtbqwX8Q8ORha5LZ7G4uQil-QdGDH9eQZmfbyHZTklTw35vagidPwzAPc3gJueRswlkFN3zCG86hEUdkxFldF8B5c0xGjDEoKiX5KTmL8TOvUgCMyMdrClubtsH01AwtdUPC0BmLdBP8BkNyGKnv8o1O-2faOrP2mW37FMyX8z0m2rvlKlFcu5TcsMzEt3hOTjrTR7w4zDF5v797mz0W85eHp9l0Xlioq1TAomaIyIwtS9MJXEipUKhSiAZkK9q2kdJasB1UyqBVwqoFU0YZbrGtS4Axudr_9TE5Ha1LaFfWDwPapEUOUkIls7reKxt8jAE7vQlubcK35kzvsmmuD9myvd3b3TOTnB_-x3_tdG6nf9vBDwupddA</recordid><startdate>20041025</startdate><enddate>20041025</enddate><creator>Miskys, C. R.</creator><creator>Garrido, J. A.</creator><creator>Hermann, M.</creator><creator>Eickhoff, M.</creator><creator>Nebel, C. E.</creator><creator>Stutzmann, M.</creator><creator>Vogg, G.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20041025</creationdate><title>Structural and interface properties of an AlN diamond ultraviolet light emitting diode</title><author>Miskys, C. R. ; Garrido, J. A. ; Hermann, M. ; Eickhoff, M. ; Nebel, C. E. ; Stutzmann, M. ; Vogg, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c376t-3b70eee0ac44af2eb559e29422835d2dd855cc3cf369aec92c9b09a9a1ced7433</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>ALUMINIUM NITRIDES</topic><topic>DIAMONDS</topic><topic>ELECTRIC POTENTIAL</topic><topic>ELECTROLUMINESCENCE</topic><topic>INTERFACES</topic><topic>LAYERS</topic><topic>LIGHT EMITTING DIODES</topic><topic>MATERIALS SCIENCE</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>MORPHOLOGY</topic><topic>PHOTOCONDUCTIVITY</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SURFACES</topic><topic>ULTRAVIOLET RADIATION</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Miskys, C. R.</creatorcontrib><creatorcontrib>Garrido, J. A.</creatorcontrib><creatorcontrib>Hermann, M.</creatorcontrib><creatorcontrib>Eickhoff, M.</creatorcontrib><creatorcontrib>Nebel, C. E.</creatorcontrib><creatorcontrib>Stutzmann, M.</creatorcontrib><creatorcontrib>Vogg, G.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Miskys, C. R.</au><au>Garrido, J. A.</au><au>Hermann, M.</au><au>Eickhoff, M.</au><au>Nebel, C. E.</au><au>Stutzmann, M.</au><au>Vogg, G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural and interface properties of an AlN diamond ultraviolet light emitting diode</atitle><jtitle>Applied physics letters</jtitle><date>2004-10-25</date><risdate>2004</risdate><volume>85</volume><issue>17</issue><spage>3699</spage><epage>3701</epage><pages>3699-3701</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Two practically fully relaxed AlN domains were identified by x-ray diffractometry for AlN grown on (100) diamond. The epitaxial orientation relationships
(
0001
)
[
10
1
¯
0
]
Al
N
I
||
(
100
)
[
011
]
diamond for the predominant AlN domain (type I) and
(
0001
)
[
1
¯
2
1
¯
0
]
Al
N
II
||
(
100
)
[
011
]
diamond for the second domain (type II) are obtained. Surface morphology measurements corroborate the good structural quality of the AlN film. In addition, the intrinsic built-in voltage of a
n
-
Al
N
∕
p
-diamond diode was determined as
1.15
V
. By spectrally resolved photocurrent measurements, the ultraviolet electroluminescence emission was confirmed to originate at the heterojunction interface, and is most probably due to a defect center.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.1811382</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2004-10, Vol.85 (17), p.3699-3701 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_20634365 |
| source | AIP Journals Complete; AIP Digital Archive |
| subjects | ALUMINIUM NITRIDES DIAMONDS ELECTRIC POTENTIAL ELECTROLUMINESCENCE INTERFACES LAYERS LIGHT EMITTING DIODES MATERIALS SCIENCE MOLECULAR BEAM EPITAXY MORPHOLOGY PHOTOCONDUCTIVITY SEMICONDUCTOR MATERIALS SURFACES ULTRAVIOLET RADIATION X-RAY DIFFRACTION |
| title | Structural and interface properties of an AlN diamond ultraviolet light emitting diode |
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