Electrical transport properties of single ZnO nanorods
Single ZnO nanorods with diameters of ∼ 130 nm were grown on Au-coated Al 2 O 3 substrates by catalyst-driven molecular beam epitaxy. Individual nanorods were removed from the substrate and placed between Ohmic contact pads and the current-voltage characteristics measured as a function of temperatur...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2004-09, Vol.85 (11), p.2002-2004 |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Single ZnO nanorods with diameters of
∼
130
nm
were grown on Au-coated
Al
2
O
3
substrates by catalyst-driven molecular beam epitaxy. Individual nanorods were removed from the substrate and placed between Ohmic contact pads and the current-voltage characteristics measured as a function of temperature and gas ambient. In the temperature range from
25
to
150
°
C
, the resistivity of nanorods treated in
H
2
at
400
°
C
prior to measurement showed an activation energy of
0.089
±
0.02
eV
and was insensitive to the ambient used (
C
2
H
4
,
N
2
O
,
O
2
or 10%
H
2
in
N
2
). By sharp contrast, the conductivity of nanorods not treated in
H
2
was sensitive to trace concentrations of gases in the measurement ambient even at room temperature, demonstrating their potential as gas sensors. |
---|---|
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1792373 |