High-frequency surface acoustic wave device based on thin-film piezoelectric interdigital transducers

Using high-quality epitaxial c -axis Pb ( Zr 0.2 Ti 0.8 ) O 3 films grown by off-axis magnetron sputtering onto metallic (001) Nb -doped SrTiO 3 substrates, a nonconventional thin-film surface acoustic wave device based on periodic piezoelectric transducers was realized. The piezoelectric transducer...

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Veröffentlicht in:Applied physics letters 2004-09, Vol.85 (10), p.1757-1759
Hauptverfasser: Sarin Kumar, A. K., Paruch, P., Triscone, J.-M., Daniau, W., Ballandras, S., Pellegrino, L., Marré, D., Tybell, T.
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Sprache:eng
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Zusammenfassung:Using high-quality epitaxial c -axis Pb ( Zr 0.2 Ti 0.8 ) O 3 films grown by off-axis magnetron sputtering onto metallic (001) Nb -doped SrTiO 3 substrates, a nonconventional thin-film surface acoustic wave device based on periodic piezoelectric transducers was realized. The piezoelectric transducers consist of a series of ferroelectric domains with alternating polarization states. The artificial modification of the ferroelectric domain structure is performed by using an atomic force microscope tip as a source of electric field, allowing local switching of the polarization. Devices with 1.2 and 0.8 μ m wavelength, defined by the modulation period of the polarization, and corresponding to central frequencies in the range 1.50 - 3.50 GHz have been realized and tested.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1787897