Single crystal growth and characterization of topological semimetal ZrSnTe

High quality single crystals are critical for experimental materials science research. ZrSnTe represents such an example. This material belongs to the ZrSiS-type topological material family, which is so far the only one in this material family possessing Fermi surface formed by Dirac bands generated by a Sn-square net. Experimental study on ZrSnTe is limited due to the difficulty in single crystal growth. In this work, we report the single crystal growth for ZrSnTe using a solid-state reaction method with Sn as a flux. The roles of various growth parameters such as the molar ratio of starting materials, growth temperature and cooling rate in obtaining sizeable single crystals were investigated. The quality of the obtained single crystals was checked by elemental, structural and electronic characterizations. Our study on the growth method for ZrSnTe would enable the future study on this less explored topological semimetal. •The single crystal growth method for topological semimetal ZrSnTe was optimized.•Composition and structures analyses confirm the phase of the obtained crystals.•Raman spectroscopy and electron transport properties were characterized.