Toward Hot Carrier Extraction in Intervalley Photovoltaic Devices

InGaAs heterostructures have demonstrated the means to maintain hot carrier behavior under practical operating conditions via valley photovoltaics. However, enhancing the extraction to create a fully operational hot carrier solar cell requires an enhanced understanding of the barriers inside such devices. A set of four InGaAs heterostructures altering the n+ top layer of the structure has been produced to enable comparative analysis of the current density-voltage characterization and the relationship to the band and valley alignments.