Crystal structure and magnetic properties in semiconducting Eu 3−δ Zn x Sn y As 3 with Eu-Eu dimers
Magnetic structure and crystal symmetry, which primarily determine the time-reversal and inversion symmetry, may give rise to numerous exotic quantum phenomena in magnetic semiconductors and semimetals when arranged in different patterns. In this work, a new layered magnetic semiconductor, Eu 3−δ Zn...
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Veröffentlicht in: | Journal of applied physics 2022-07, Vol.132 (4) |
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Hauptverfasser: | , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Magnetic structure and crystal symmetry, which primarily determine the time-reversal and inversion symmetry, may give rise to numerous exotic quantum phenomena in magnetic semiconductors and semimetals when arranged in different patterns. In this work, a new layered magnetic semiconductor, Eu
3−δ
Zn
x
Sn
y
As
3
, was discovered and high-quality single crystals were grown using the Sn flux. According to structural characterization by x-ray diffraction and atomic-resolution scanning transmission electron microscopy, Eu
3−δ
Zn
x
Sn
y
As
3
is found to crystallize in a hexagonal symmetry with the space group P6
3
/ mmc (No. 194). After examining different specimens, we conclude that their stoichiometry is fixed at ∼Eu
2.6
Zn
0.65
Sn
0.85
As
3
, which meets the chemical charge balance. Eu
3−δ
Zn
x
Sn
y
As
3
is composed of septuple (Eu
1−δ
Sn
y
As
2
)-Eu-(Zn
x
As)-Eu sequences. The shortest Eu–Eu distance in the system is between two Eu layers separated by Zn
x
As along the c-axis. Magnetization measurement shows an antiferromagnetic ordering in Eu
3−δ
Zn
x
Sn
y
As
3
at T
N
∼ 12 K, where the magnetic easy-axis is along the c-axis, and Mössbauer spectroscopy observes magnetic hyperfine splitting on Eu and Sn at 6 K. Magnetic anisotropy is significantly different from the ones along the ab-plane in other layered Eu-based magnetic semimetals. Heat capacity measurements confirm the magnetic transition around 12 K. Electrical resistivity measurement indicates semiconductor behavior with a band gap of ∼0.86 eV. Various Eu-based magnetic semiconductors could provide a tunable platform to study potential topological and magnetic properties. |
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ISSN: | 0021-8979 1089-7550 |