Crystal structure and magnetic properties in semiconducting Eu 3−δ Zn x Sn y As 3 with Eu-Eu dimers

Magnetic structure and crystal symmetry, which primarily determine the time-reversal and inversion symmetry, may give rise to numerous exotic quantum phenomena in magnetic semiconductors and semimetals when arranged in different patterns. In this work, a new layered magnetic semiconductor, Eu 3−δ Zn...

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Veröffentlicht in:Journal of applied physics 2022-07, Vol.132 (4)
Hauptverfasser: Yang, Yongqi, Cheng, Guangming, Blawat, Joanna, Moseley, Duncan H., Wang, Haozhe, Devlin, Kasey P., Yu, Yu, Hermann, Raphaël P., Yao, Nan, Jin, Rongying, Xie, Weiwei
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Sprache:eng
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Zusammenfassung:Magnetic structure and crystal symmetry, which primarily determine the time-reversal and inversion symmetry, may give rise to numerous exotic quantum phenomena in magnetic semiconductors and semimetals when arranged in different patterns. In this work, a new layered magnetic semiconductor, Eu 3−δ Zn x Sn y As 3 , was discovered and high-quality single crystals were grown using the Sn flux. According to structural characterization by x-ray diffraction and atomic-resolution scanning transmission electron microscopy, Eu 3−δ Zn x Sn y As 3 is found to crystallize in a hexagonal symmetry with the space group P6 3 / mmc (No. 194). After examining different specimens, we conclude that their stoichiometry is fixed at ∼Eu 2.6 Zn 0.65 Sn 0.85 As 3 , which meets the chemical charge balance. Eu 3−δ Zn x Sn y As 3 is composed of septuple (Eu 1−δ Sn y As 2 )-Eu-(Zn x As)-Eu sequences. The shortest Eu–Eu distance in the system is between two Eu layers separated by Zn x As along the c-axis. Magnetization measurement shows an antiferromagnetic ordering in Eu 3−δ Zn x Sn y As 3 at T N  ∼ 12 K, where the magnetic easy-axis is along the c-axis, and Mössbauer spectroscopy observes magnetic hyperfine splitting on Eu and Sn at 6 K. Magnetic anisotropy is significantly different from the ones along the ab-plane in other layered Eu-based magnetic semimetals. Heat capacity measurements confirm the magnetic transition around 12 K. Electrical resistivity measurement indicates semiconductor behavior with a band gap of ∼0.86 eV. Various Eu-based magnetic semiconductors could provide a tunable platform to study potential topological and magnetic properties.
ISSN:0021-8979
1089-7550