Temperature- and size-dependent characteristics in ultrathin inorganic light-emitting diodes assembled by transfer printing

Favorable temperature- and size-dependent device characteristics in mechanically flexible, thin (∼6.45 μm thick), microscale inorganic InGaN/GaN-based light-emitting diodes enable their use as highly efficient, robust devices that are capable of integration on diverse classes of unconventional subst...

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Veröffentlicht in:Applied physics letters 2014-02, Vol.104 (5)
Hauptverfasser: Kim, Tae-il, Hyun Lee, Soo, Li, Yuhang, Shi, Yan, Shin, Gunchul, Dan Lee, Sung, Huang, Yonggang, Rogers, John A., Su Yu, Jae
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Sprache:eng
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Zusammenfassung:Favorable temperature- and size-dependent device characteristics in mechanically flexible, thin (∼6.45 μm thick), microscale inorganic InGaN/GaN-based light-emitting diodes enable their use as highly efficient, robust devices that are capable of integration on diverse classes of unconventional substrates, including sheets of plastic. Finite element analysis and systematic studies of the operational properties establish important thermal, electrical, and optical considerations for this type of device.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4863856