High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

We demonstrate Si-implanted AlN with high conductivity (>1 Ω-1 cm-1) and high carrier concentration (5 × 1018 cm-3). This was enabled by Si implantation into AlN with a low threading dislocation density (TDD) (

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Veröffentlicht in:Applied physics letters 2021-03, Vol.118 (11)
Hauptverfasser: Breckenridge, M. Hayden, Bagheri, Pegah, Guo, Qiang, Sarkar, Biplab, Khachariya, Dolar, Pavlidis, Spyridon, Tweedie, James, Kirste, Ronny, Mita, Seiji, Reddy, Pramod, Collazo, Ramón, Sitar, Zlatko
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CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
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container_issue 11
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container_title Applied physics letters
container_volume 118
creator Breckenridge, M. Hayden
Bagheri, Pegah
Guo, Qiang
Sarkar, Biplab
Khachariya, Dolar
Pavlidis, Spyridon
Tweedie, James
Kirste, Ronny
Mita, Seiji
Reddy, Pramod
Collazo, Ramón
Sitar, Zlatko
description We demonstrate Si-implanted AlN with high conductivity (>1 Ω-1 cm-1) and high carrier concentration (5 × 1018 cm-3). This was enabled by Si implantation into AlN with a low threading dislocation density (TDD) (
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fullrecord <record><control><sourceid>osti</sourceid><recordid>TN_cdi_osti_scitechconnect_1851567</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1851567</sourcerecordid><originalsourceid>FETCH-osti_scitechconnect_18515673</originalsourceid><addsrcrecordid>eNqNjMsKwjAUBYMoWB__ENwHEkPauhRRunJj9xLSaK-kSUmuYv_eCn6Aq8Mww5mQTPCiYFKIckoyzrlk-U6JOVmk9BhRbaXMSF3BvaWe4dBbaoJvngbhBThQ7RtqdIxg41cY6zFqhOApeHoBBl3vtEfb0DZ0wfaA-g3a0b07r8jspl2y698uyeZ0rA8VCwnhmgygNe346a3BqyiVUHkh_4o-MEhCAQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Breckenridge, M. Hayden ; Bagheri, Pegah ; Guo, Qiang ; Sarkar, Biplab ; Khachariya, Dolar ; Pavlidis, Spyridon ; Tweedie, James ; Kirste, Ronny ; Mita, Seiji ; Reddy, Pramod ; Collazo, Ramón ; Sitar, Zlatko</creator><creatorcontrib>Breckenridge, M. Hayden ; Bagheri, Pegah ; Guo, Qiang ; Sarkar, Biplab ; Khachariya, Dolar ; Pavlidis, Spyridon ; Tweedie, James ; Kirste, Ronny ; Mita, Seiji ; Reddy, Pramod ; Collazo, Ramón ; Sitar, Zlatko ; Adroit Materials, Cary, NC (United States) ; North Carolina State Univ., Raleigh, NC (United States)</creatorcontrib><description>We demonstrate Si-implanted AlN with high conductivity (&gt;1 Ω-1 cm-1) and high carrier concentration (5 × 1018 cm-3). This was enabled by Si implantation into AlN with a low threading dislocation density (TDD) (&lt;103 cm-2), a non-equilibrium damage recovery and dopant activation annealing process, and in situ suppression of self-compensation during the annealing. Low TDD and active suppression of VAl-nSiAl complexes via defect quasi Fermi level control enabled low compensation, while low-temperature, non-equilibrium annealing maintained the desired shallow donor state with an ionization energy of ~70 meV. The realized n-type conductivity and carrier concentration are over one order of magnitude higher than that reported thus far and present a major technological breakthrough in doping of AlN.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><language>eng</language><publisher>United States: American Institute of Physics (AIP)</publisher><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><ispartof>Applied physics letters, 2021-03, Vol.118 (11)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000000216902581 ; 0000000287385921 ; 0000000300740626 ; 0000000218804811 ; 0000000235301888 ; 0000000285561178 ; 0000000287804583 ; 0000000273850837</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885</link.rule.ids><backlink>$$Uhttps://www.osti.gov/servlets/purl/1851567$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Breckenridge, M. Hayden</creatorcontrib><creatorcontrib>Bagheri, Pegah</creatorcontrib><creatorcontrib>Guo, Qiang</creatorcontrib><creatorcontrib>Sarkar, Biplab</creatorcontrib><creatorcontrib>Khachariya, Dolar</creatorcontrib><creatorcontrib>Pavlidis, Spyridon</creatorcontrib><creatorcontrib>Tweedie, James</creatorcontrib><creatorcontrib>Kirste, Ronny</creatorcontrib><creatorcontrib>Mita, Seiji</creatorcontrib><creatorcontrib>Reddy, Pramod</creatorcontrib><creatorcontrib>Collazo, Ramón</creatorcontrib><creatorcontrib>Sitar, Zlatko</creatorcontrib><creatorcontrib>Adroit Materials, Cary, NC (United States)</creatorcontrib><creatorcontrib>North Carolina State Univ., Raleigh, NC (United States)</creatorcontrib><title>High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN</title><title>Applied physics letters</title><description>We demonstrate Si-implanted AlN with high conductivity (&gt;1 Ω-1 cm-1) and high carrier concentration (5 × 1018 cm-3). This was enabled by Si implantation into AlN with a low threading dislocation density (TDD) (&lt;103 cm-2), a non-equilibrium damage recovery and dopant activation annealing process, and in situ suppression of self-compensation during the annealing. Low TDD and active suppression of VAl-nSiAl complexes via defect quasi Fermi level control enabled low compensation, while low-temperature, non-equilibrium annealing maintained the desired shallow donor state with an ionization energy of ~70 meV. The realized n-type conductivity and carrier concentration are over one order of magnitude higher than that reported thus far and present a major technological breakthrough in doping of AlN.</description><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNqNjMsKwjAUBYMoWB__ENwHEkPauhRRunJj9xLSaK-kSUmuYv_eCn6Aq8Mww5mQTPCiYFKIckoyzrlk-U6JOVmk9BhRbaXMSF3BvaWe4dBbaoJvngbhBThQ7RtqdIxg41cY6zFqhOApeHoBBl3vtEfb0DZ0wfaA-g3a0b07r8jspl2y698uyeZ0rA8VCwnhmgygNe346a3BqyiVUHkh_4o-MEhCAQ</recordid><startdate>20210316</startdate><enddate>20210316</enddate><creator>Breckenridge, M. Hayden</creator><creator>Bagheri, Pegah</creator><creator>Guo, Qiang</creator><creator>Sarkar, Biplab</creator><creator>Khachariya, Dolar</creator><creator>Pavlidis, Spyridon</creator><creator>Tweedie, James</creator><creator>Kirste, Ronny</creator><creator>Mita, Seiji</creator><creator>Reddy, Pramod</creator><creator>Collazo, Ramón</creator><creator>Sitar, Zlatko</creator><general>American Institute of Physics (AIP)</general><scope>OIOZB</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000000216902581</orcidid><orcidid>https://orcid.org/0000000287385921</orcidid><orcidid>https://orcid.org/0000000300740626</orcidid><orcidid>https://orcid.org/0000000218804811</orcidid><orcidid>https://orcid.org/0000000235301888</orcidid><orcidid>https://orcid.org/0000000285561178</orcidid><orcidid>https://orcid.org/0000000287804583</orcidid><orcidid>https://orcid.org/0000000273850837</orcidid></search><sort><creationdate>20210316</creationdate><title>High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN</title><author>Breckenridge, M. Hayden ; Bagheri, Pegah ; Guo, Qiang ; Sarkar, Biplab ; Khachariya, Dolar ; Pavlidis, Spyridon ; Tweedie, James ; Kirste, Ronny ; Mita, Seiji ; Reddy, Pramod ; Collazo, Ramón ; Sitar, Zlatko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_18515673</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Breckenridge, M. Hayden</creatorcontrib><creatorcontrib>Bagheri, Pegah</creatorcontrib><creatorcontrib>Guo, Qiang</creatorcontrib><creatorcontrib>Sarkar, Biplab</creatorcontrib><creatorcontrib>Khachariya, Dolar</creatorcontrib><creatorcontrib>Pavlidis, Spyridon</creatorcontrib><creatorcontrib>Tweedie, James</creatorcontrib><creatorcontrib>Kirste, Ronny</creatorcontrib><creatorcontrib>Mita, Seiji</creatorcontrib><creatorcontrib>Reddy, Pramod</creatorcontrib><creatorcontrib>Collazo, Ramón</creatorcontrib><creatorcontrib>Sitar, Zlatko</creatorcontrib><creatorcontrib>Adroit Materials, Cary, NC (United States)</creatorcontrib><creatorcontrib>North Carolina State Univ., Raleigh, NC (United States)</creatorcontrib><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Breckenridge, M. Hayden</au><au>Bagheri, Pegah</au><au>Guo, Qiang</au><au>Sarkar, Biplab</au><au>Khachariya, Dolar</au><au>Pavlidis, Spyridon</au><au>Tweedie, James</au><au>Kirste, Ronny</au><au>Mita, Seiji</au><au>Reddy, Pramod</au><au>Collazo, Ramón</au><au>Sitar, Zlatko</au><aucorp>Adroit Materials, Cary, NC (United States)</aucorp><aucorp>North Carolina State Univ., Raleigh, NC (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN</atitle><jtitle>Applied physics letters</jtitle><date>2021-03-16</date><risdate>2021</risdate><volume>118</volume><issue>11</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We demonstrate Si-implanted AlN with high conductivity (&gt;1 Ω-1 cm-1) and high carrier concentration (5 × 1018 cm-3). This was enabled by Si implantation into AlN with a low threading dislocation density (TDD) (&lt;103 cm-2), a non-equilibrium damage recovery and dopant activation annealing process, and in situ suppression of self-compensation during the annealing. Low TDD and active suppression of VAl-nSiAl complexes via defect quasi Fermi level control enabled low compensation, while low-temperature, non-equilibrium annealing maintained the desired shallow donor state with an ionization energy of ~70 meV. The realized n-type conductivity and carrier concentration are over one order of magnitude higher than that reported thus far and present a major technological breakthrough in doping of AlN.</abstract><cop>United States</cop><pub>American Institute of Physics (AIP)</pub><orcidid>https://orcid.org/0000000216902581</orcidid><orcidid>https://orcid.org/0000000287385921</orcidid><orcidid>https://orcid.org/0000000300740626</orcidid><orcidid>https://orcid.org/0000000218804811</orcidid><orcidid>https://orcid.org/0000000235301888</orcidid><orcidid>https://orcid.org/0000000285561178</orcidid><orcidid>https://orcid.org/0000000287804583</orcidid><orcidid>https://orcid.org/0000000273850837</orcidid><oa>free_for_read</oa></addata></record>
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subjects CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
title High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T08%3A36%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-osti&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High%20n-type%20conductivity%20and%20carrier%20concentration%20in%20Si-implanted%20homoepitaxial%20AlN&rft.jtitle=Applied%20physics%20letters&rft.au=Breckenridge,%20M.%20Hayden&rft.aucorp=Adroit%20Materials,%20Cary,%20NC%20(United%20States)&rft.date=2021-03-16&rft.volume=118&rft.issue=11&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/&rft_dat=%3Costi%3E1851567%3C/osti%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true