High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

We demonstrate Si-implanted AlN with high conductivity (>1 Ω-1 cm-1) and high carrier concentration (5 × 1018 cm-3). This was enabled by Si implantation into AlN with a low threading dislocation density (TDD) (

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Veröffentlicht in:Applied physics letters 2021-03, Vol.118 (11)
Hauptverfasser: Breckenridge, M. Hayden, Bagheri, Pegah, Guo, Qiang, Sarkar, Biplab, Khachariya, Dolar, Pavlidis, Spyridon, Tweedie, James, Kirste, Ronny, Mita, Seiji, Reddy, Pramod, Collazo, Ramón, Sitar, Zlatko
Format: Artikel
Sprache:eng
Schlagworte:
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
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Zusammenfassung:We demonstrate Si-implanted AlN with high conductivity (>1 Ω-1 cm-1) and high carrier concentration (5 × 1018 cm-3). This was enabled by Si implantation into AlN with a low threading dislocation density (TDD) (
ISSN:0003-6951
1077-3118