Characterization of high-purity germanium (Ge) crystals for developing novel Ge detectors

High-purity germanium (HPGe) crystals are required to be well-characterized before being fabricated into Ge detectors. The characterization of HPGe crystals is often performed with the Hall Effect system, which measures the net carrier concentration, the Hall mobility, and the electrical resistivity...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of instrumentation 2020-10, Vol.15 (10), p.T10010-T10010
Hauptverfasser:	Raut, M.-S., Mei, H., Mei, D.-M., Bhattarai, S., Wei, W.-Z., Panth, R., Acharya, P., Wang, G.-J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier density Contact resistance Crystals Detectors Electric contacts Electromagnetism Electron mobility Germanium Hall effect Instruments & Instrumentation Purity Systematic errors
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!