High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

Here, in ionically conducting Na0.5Bi0.5TiO3 (NBT), we explore the link between growth parameters, stoichiometry and resistive switching behavior and show NBT to be a highly tunable system. We show that the combination of oxygen ionic vacancies and low-level electronic conduction is important for co...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2021-04, Vol.9 (13), p.4522-4531
Hauptverfasser:	Chao, Yun, Webb, Matthew, Li, Weiwei, Wu, Rui, Xiao, Ming, Hellenbrand, Markus, Kursumovic, Ahmed, Dou, Hongyi, Gao, Xingyao, Dhole, Samyak, Zhang, Di, Chen, Aiping, Shi, Jueli, Zhang, Kelvin H L, Wang, Haiyan, Jia, Quanxi, MacManus-Driscoll, Judith L
Format:	Artikel
Sprache:	eng
Schlagworte:	Bismuth titanate Conduction Electrical measurement Electroforming High resistance Ion currents Low resistance MATERIALS SCIENCE Memristors Parameters Perovskites Platinum Silver Stoichiometry Switching Thin films Vacancies Voltage pulses X ray photoelectron spectroscopy
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Zusammenfassung:	Here, in ionically conducting Na0.5Bi0.5TiO3 (NBT), we explore the link between growth parameters, stoichiometry and resistive switching behavior and show NBT to be a highly tunable system. We show that the combination of oxygen ionic vacancies and low-level electronic conduction is important for controlling Schottky barrier interfacial switching. We achieve a large ON/OFF ratio for high resistance/low resistance (RHRS/RLRS), enabled by an almost constant RHRS of ∼109 Ω, and composition-tunable RLRS value modulated by growth temperature. RHRS/RLRS ratios of up to 104 and pronounced resistive switching at low voltages (SET voltage of
ISSN:	2050-7526 2050-7534
DOI:	10.1039/d1tc00202c