Detecting topological phase transitions in cadmium arsenide films via the transverse magnetoresistance

Topological protection against localization causes electrical transport phenomena in disordered topological materials to differ from those in topologically trivial systems. For example, a transition between a regime of weak localization to one of weak antilocalization can occur in systems such as to...

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Veröffentlicht in:Applied physics letters 2021-10, Vol.119 (17)
Hauptverfasser: Shoron, Omor F., Kealhofer, David A., Goyal, Manik, Schumann, Timo, Burkov, Anton A., Stemmer, Susanne
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Sprache:eng
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