Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation

Here, integrated silicon microwave pin diodes are exposed to 10-keV X-rays up to a dose of 2 Mrad(SiO2) and 14-MeV fast neutrons up to a fluence of 2.2×1013 cm-2. Changes in both DC leakage current and small-signal circuit components are examined. Degradation in performance due to total-ionizing dos...

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Veröffentlicht in:	IEEE transactions on nuclear science 2021-10, Vol.69 (3)
Hauptverfasser:	Teng, Jeffrey W., Nergui, Delgermaa, Parameswaran, Hari, Sepulveda-Ramos, Nelson E., Tzintzarov, George N., Mensah, Yaw, Cheon, Clifford D., Rao, Sunil G., Ringel, Brett, Gorchichko, Mariia, Li, Kan, Ying, Hanbin, Ildefonso, Adrian, Dodds, Nathaniel A., Nathan Nowlin, R., Zhang, En Xia, Fleetwood, Daniel M., Cressler, John D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Displacement Damage ENGINEERING Fast Neutron pin Diode Radiation SiGe BiCMOS Silicon TCAD Total Ionizing Dose X-ray
Online-Zugang:	Volltext
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