Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation

Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation

Here, integrated silicon microwave pin diodes are exposed to 10-keV X-rays up to a dose of 2 Mrad(SiO2) and 14-MeV fast neutrons up to a fluence of 2.2×1013 cm-2. Changes in both DC leakage current and small-signal circuit components are examined. Degradation in performance due to total-ionizing dos...

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Veröffentlicht in:IEEE transactions on nuclear science 2021-10, Vol.69 (3)
Hauptverfasser: Teng, Jeffrey W., Nergui, Delgermaa, Parameswaran, Hari, Sepulveda-Ramos, Nelson E., Tzintzarov, George N., Mensah, Yaw, Cheon, Clifford D., Rao, Sunil G., Ringel, Brett, Gorchichko, Mariia, Li, Kan, Ying, Hanbin, Ildefonso, Adrian, Dodds, Nathaniel A., Nathan Nowlin, R., Zhang, En Xia, Fleetwood, Daniel M., Cressler, John D.
Format: Artikel
Sprache:eng
Schlagworte:
Displacement Damage
ENGINEERING
Fast Neutron
pin Diode
Radiation
SiGe BiCMOS
Silicon
TCAD
Total Ionizing Dose
X-ray
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Zusammenfassung:Here, integrated silicon microwave pin diodes are exposed to 10-keV X-rays up to a dose of 2 Mrad(SiO2) and 14-MeV fast neutrons up to a fluence of 2.2×1013 cm-2. Changes in both DC leakage current and small-signal circuit components are examined. Degradation in performance due to total-ionizing dose is shown to be suppressed by non-quasi-static effects during RF operation. Tolerance to displacement damage from fast neutrons is also observed, which is explained using TCAD simulations. Overall, the characterized pin diodes are tolerant to cumulative radiation at levels consistent with space applications such as geosynchronous weather satellites.
ISSN:0018-9499
1558-1578