Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation
Here, integrated silicon microwave pin diodes are exposed to 10-keV X-rays up to a dose of 2 Mrad(SiO2) and 14-MeV fast neutrons up to a fluence of 2.2×1013 cm-2. Changes in both DC leakage current and small-signal circuit components are examined. Degradation in performance due to total-ionizing dos...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2021-10, Vol.69 (3) |
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| creator | Teng, Jeffrey W. Nergui, Delgermaa Parameswaran, Hari Sepulveda-Ramos, Nelson E. Tzintzarov, George N. Mensah, Yaw Cheon, Clifford D. Rao, Sunil G. Ringel, Brett Gorchichko, Mariia Li, Kan Ying, Hanbin Ildefonso, Adrian Dodds, Nathaniel A. Nathan Nowlin, R. Zhang, En Xia Fleetwood, Daniel M. Cressler, John D. |
| description | Here, integrated silicon microwave pin diodes are exposed to 10-keV X-rays up to a dose of 2 Mrad(SiO2) and 14-MeV fast neutrons up to a fluence of 2.2×1013 cm-2. Changes in both DC leakage current and small-signal circuit components are examined. Degradation in performance due to total-ionizing dose is shown to be suppressed by non-quasi-static effects during RF operation. Tolerance to displacement damage from fast neutrons is also observed, which is explained using TCAD simulations. Overall, the characterized pin diodes are tolerant to cumulative radiation at levels consistent with space applications such as geosynchronous weather satellites. |
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(SNL-NM), Albuquerque, NM (United States)</creatorcontrib><title>Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation</title><title>IEEE transactions on nuclear science</title><description>Here, integrated silicon microwave pin diodes are exposed to 10-keV X-rays up to a dose of 2 Mrad(SiO2) and 14-MeV fast neutrons up to a fluence of 2.2×1013 cm-2. Changes in both DC leakage current and small-signal circuit components are examined. Degradation in performance due to total-ionizing dose is shown to be suppressed by non-quasi-static effects during RF operation. Tolerance to displacement damage from fast neutrons is also observed, which is explained using TCAD simulations. Overall, the characterized pin diodes are tolerant to cumulative radiation at levels consistent with space applications such as geosynchronous weather satellites.</description><subject>Displacement Damage</subject><subject>ENGINEERING</subject><subject>Fast Neutron</subject><subject>pin Diode</subject><subject>Radiation</subject><subject>SiGe BiCMOS</subject><subject>Silicon</subject><subject>TCAD</subject><subject>Total Ionizing Dose</subject><subject>X-ray</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNqNjcuKAjEQAIMoOD7-ofEemOhEZ84-0MPuYdeDniRkWm2RRNKt4t87Bz_AU1FQUC2VGWtLbeysbKssz02pq6KquqrHfGm0sLnN1P4P-RYDI8QjbILgKTnBGv7pSj4G-CGf4tM9EG4UYEGxRgaJsNPJvcCFGlaORf_iXVKTb1JyNTmhGAaqc3RXxuGHfTVaLbfztY4sdGBPgv7cLAJ6OZhyPJua6eSr6A1KPUMq</recordid><startdate>20211013</startdate><enddate>20211013</enddate><creator>Teng, Jeffrey W.</creator><creator>Nergui, Delgermaa</creator><creator>Parameswaran, Hari</creator><creator>Sepulveda-Ramos, Nelson E.</creator><creator>Tzintzarov, George N.</creator><creator>Mensah, Yaw</creator><creator>Cheon, Clifford D.</creator><creator>Rao, Sunil G.</creator><creator>Ringel, Brett</creator><creator>Gorchichko, Mariia</creator><creator>Li, Kan</creator><creator>Ying, Hanbin</creator><creator>Ildefonso, Adrian</creator><creator>Dodds, Nathaniel A.</creator><creator>Nathan Nowlin, R.</creator><creator>Zhang, En Xia</creator><creator>Fleetwood, Daniel M.</creator><creator>Cressler, John D.</creator><general>IEEE</general><scope>OIOZB</scope><scope>OTOTI</scope></search><sort><creationdate>20211013</creationdate><title>Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation</title><author>Teng, Jeffrey W. ; Nergui, Delgermaa ; Parameswaran, Hari ; Sepulveda-Ramos, Nelson E. ; Tzintzarov, George N. ; Mensah, Yaw ; Cheon, Clifford D. ; Rao, Sunil G. ; Ringel, Brett ; Gorchichko, Mariia ; Li, Kan ; Ying, Hanbin ; Ildefonso, Adrian ; Dodds, Nathaniel A. ; Nathan Nowlin, R. ; Zhang, En Xia ; Fleetwood, Daniel M. ; Cressler, John D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_18276163</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Displacement Damage</topic><topic>ENGINEERING</topic><topic>Fast Neutron</topic><topic>pin Diode</topic><topic>Radiation</topic><topic>SiGe BiCMOS</topic><topic>Silicon</topic><topic>TCAD</topic><topic>Total Ionizing Dose</topic><topic>X-ray</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Teng, Jeffrey W.</creatorcontrib><creatorcontrib>Nergui, Delgermaa</creatorcontrib><creatorcontrib>Parameswaran, Hari</creatorcontrib><creatorcontrib>Sepulveda-Ramos, Nelson E.</creatorcontrib><creatorcontrib>Tzintzarov, George N.</creatorcontrib><creatorcontrib>Mensah, Yaw</creatorcontrib><creatorcontrib>Cheon, Clifford D.</creatorcontrib><creatorcontrib>Rao, Sunil G.</creatorcontrib><creatorcontrib>Ringel, Brett</creatorcontrib><creatorcontrib>Gorchichko, Mariia</creatorcontrib><creatorcontrib>Li, Kan</creatorcontrib><creatorcontrib>Ying, Hanbin</creatorcontrib><creatorcontrib>Ildefonso, Adrian</creatorcontrib><creatorcontrib>Dodds, Nathaniel A.</creatorcontrib><creatorcontrib>Nathan Nowlin, R.</creatorcontrib><creatorcontrib>Zhang, En Xia</creatorcontrib><creatorcontrib>Fleetwood, Daniel M.</creatorcontrib><creatorcontrib>Cressler, John D.</creatorcontrib><creatorcontrib>Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</creatorcontrib><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Teng, Jeffrey W.</au><au>Nergui, Delgermaa</au><au>Parameswaran, Hari</au><au>Sepulveda-Ramos, Nelson E.</au><au>Tzintzarov, George N.</au><au>Mensah, Yaw</au><au>Cheon, Clifford D.</au><au>Rao, Sunil G.</au><au>Ringel, Brett</au><au>Gorchichko, Mariia</au><au>Li, Kan</au><au>Ying, Hanbin</au><au>Ildefonso, Adrian</au><au>Dodds, Nathaniel A.</au><au>Nathan Nowlin, R.</au><au>Zhang, En Xia</au><au>Fleetwood, Daniel M.</au><au>Cressler, John D.</au><aucorp>Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation</atitle><jtitle>IEEE transactions on nuclear science</jtitle><date>2021-10-13</date><risdate>2021</risdate><volume>69</volume><issue>3</issue><issn>0018-9499</issn><eissn>1558-1578</eissn><abstract>Here, integrated silicon microwave pin diodes are exposed to 10-keV X-rays up to a dose of 2 Mrad(SiO2) and 14-MeV fast neutrons up to a fluence of 2.2×1013 cm-2. Changes in both DC leakage current and small-signal circuit components are examined. Degradation in performance due to total-ionizing dose is shown to be suppressed by non-quasi-static effects during RF operation. Tolerance to displacement damage from fast neutrons is also observed, which is explained using TCAD simulations. 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| issn | 0018-9499 1558-1578 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Displacement Damage ENGINEERING Fast Neutron pin Diode Radiation SiGe BiCMOS Silicon TCAD Total Ionizing Dose X-ray |
| title | Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation |
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