Tunable Ferromagnetism and Thermally Induced Spin Flip in Vanadium‐Doped Tungsten Diselenide Monolayers at Room Temperature

The outstanding optoelectronic and valleytronic properties of transition metal dichalcogenides (TMDs) have triggered intense research efforts by the scientific community. An alternative to induce long‐range ferromagnetism (FM) in TMDs is by introducing magnetic dopants to form a dilute magnetic semiconductor. Enhancing ferromagnetism in these semiconductors not only represents a key step toward modern TMD‐based spintronics, but also enables exploration of new and exciting dimensionality‐driven magnetic phenomena. To this end, tunable ferromagnetism at room temperature and a thermally induced spin flip (TISF) in monolayers of V‐doped WSe2 are shown. As vanadium concentration increases, the saturation magnetization increases, which is optimal at ≈4 at% vanadium; the highest doping level ever achieved for V‐doped WSe2 monolayers. The TISF occurs at ≈175 K and becomes more pronounced upon increasing the temperature toward room temperature. The TISF can be manipulated by changing the vanadium concentration. The TISF is attributed to the magnetic‐field‐ and temperature‐dependent flipping of the nearest W‐site magnetic moments that are antiferromagnetically coupled to the V magnetic moments in the ground state. This is fully supported by a recent spin‐polarized density functional theory study. The findings pave the way for the development of novel spintronic and valleytronic nanodevices and stimulate further research. Strong and tunable room‐temperature ferromagnetism is achieved in vanadium‐doped tungsten diselenide monolayers using a reproducible and atmospheric‐pressure film sulfidation growth method. As the vanadium concentration increases, the saturation magnetization increases, which is optimal at ≈4 at% vanadium—the highest doping level ever achieved for V‐doped WSe2 monolayers. A novel thermally induced spin flipping effect is also discovered in these monolayers.