In-Depth Spectroscopy and New Heights for Organic Solar Cells

In this issue of Joule, Lami et al. describe a method that enables UV photoemission spectroscopy (UPS) in the transverse dimension of polymeric semiconductor layers with nanometer-scale resolution. The approach is based on the use of Argon gas cluster ion beam (GCIB) etching instead of monoatomic ion bean bombardment. The use of GCIB reduces surface damage, enabling in depth UPS. The method is applied to the study of critical electronic levels and photovoltage in organic solar cells. In this issue of Joule, Lami et al. describe a method that enables UV photoemission spectroscopy (UPS) in the transverse dimension of polymeric semiconductor layers with nanometer-scale resolution. The approach is based on the use of Argon gas cluster ion beam (GCIB) etching instead of monoatomic ion bean bombardment. The use of GCIB reduces surface damage, enabling in depth UPS. The method is applied to the study of critical electronic levels and photovoltage in organic solar cells.