Electron transfer from the barrier in InAs/GaAs quantum dot-well structure

We study single electron tunneling from the barrier in the binary InAs/GaAs quantum structure, including quantum well (QW) and quantum dot (QD). Tunneling is described in the terms of localized/delocalized states and their spectral distributions. Modeling is performed using the phenomenological effective potential approach for InAs/GaAs heterostructures. The results for the two and three-dimensional models are presented, focused on the effect of QD-QW geometry variations. The relation to the PL experiments is shown. •Tunneling is described in the terms of localized/delocalized states and their spectral distributions.•Two and three-dimensional modeling is performed for InAs/GaAs quantum well-dot complex.•Effects of QD-QW geometry variations are decribed.•The modeling covers the main phenomenons of the optical PL experiments.