Deposition pressure dependent structural and optoelectronic properties of ex-situ boron-doped poly-Si/SiOx passivating contacts based on sputtered silicon

Among common methods to form polycrystalline silicon (poly-Si) films for passivating-contact solar cells, physical vapor deposition, in particular sputtering, is the safest one as it does not require any toxic gaseous precursors. One of the critical parameters to control the properties of sputtered silicon films is their deposition pressure. In this work, structural and optoelectronic characteristics of ex-situ boron-doped poly-Si/SiOx passivating contacts, formed from sputtered intrinsic amorphous silicon (a-Si) deposited at different pressures on top of SiOx/c-Si substrates and subjected to a high-temperature boron diffusion step, are investigated. The deposition rate and density of the as-deposited a-Si films increase with reducing pressure. Low-temperature photoluminescence spectra captured from the as-deposited samples at different pressures do not show typical emissions from hydrogenated a-Si. Meanwhile, their Fourier-transform infrared absorption spectra all show Si–H stretching modes, indicating that hydrogen had been initially incorporated into the chemical SiOx layers and eventually hydrogenated the a-Si/SiOx interfaces during the sputtering process. After the high-temperature boron-diffusion step, all hydrogen-related peaks disappear. Lower pressure films (1.5 and 2.5 mTorr) show more consistent improved performance after hydrogen treatments, compared to higher pressure films (4 and 5 mTorr). The resultant passivating contacts at 2.5 mTorr achieve a low single-side recombination current density Jo of ~9 fA/cm2, whereas their contact resistivity is still low at 15 mΩ cm2. •Effects of sputtering pressure on the structural and optoelectronic properties of the as-deposited a-Si films and their corresponding ex-situ boron-doped poly-Si/SiOx passivating contacts were investigated.•The Si–H stretching modes observed by FTIR in the as-deposited films are likely a consequence of residual hydrogen incorporated to the oxide layer during its chemical growth.•The resultant poly-Si/SiOx contacts show a reasonably good initial passivation quality with Jo of 24 fA/cm2 at 2.5 mTorr, which improves to 9 fA/cm2 after hydrogenation treatments.