Experimental Study of Acceptor Removal in UFSD

Experimental Study of Acceptor Removal in UFSD

The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with capacitance–voltage, C–V, measurements of the doping concen...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2020-12, Vol.983 (C), p.164611, Article 164611
Hauptverfasser: Jin, Y., Ren, H., Christie, S., Galloway, Z., Gee, C., Labitan, C., Lockerby, M., Martinez-McKinney, F., Mazza, S.M., Padilla, R., Sadrozinski, H.F.-W., Schumm, B., Seiden, A., Wilder, M., Wyatt, W., Zhao, Y., Arcidiacono, R., Cartiglia, N., Ferrero, M., Mandurrino, M., Siviero, F., Sola, V., Tornago, M., Cindro, V., Howard, A., Kramberger, G., Mandić, I., Mikuž, M.
Format: Artikel
Sprache:eng
Schlagworte:
Acceptor Removal
Correlation C–V and charge collection
Low-gain Avalanche Detectors
Radiation damage
Ultra-Fast Silicon Detectors
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Beschreibung
Zusammenfassung:The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with capacitance–voltage, C–V, measurements of the doping concentration and with measurements of charge collection, CC, using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C–V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2020.164611