F4‐TCNQ as an Additive to Impart Stretchable Semiconductors with High Mobility and Stability
Numerous strategies are developed to impart stretchability to polymer semiconductors. Although these methods improve the ductility, mobility, and stability of such stretchable semiconductors, they nonetheless still need further improvement. Here, it is shown that 2,3,5,6‐tetrafluoro‐7,7,8,8‐tetracya...
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Veröffentlicht in: | Advanced electronic materials 2020-06, Vol.6 (6), p.n/a |
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Sprache: | eng |
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Zusammenfassung: | Numerous strategies are developed to impart stretchability to polymer semiconductors. Although these methods improve the ductility, mobility, and stability of such stretchable semiconductors, they nonetheless still need further improvement. Here, it is shown that 2,3,5,6‐tetrafluoro‐7,7,8,8‐tetracyanoquinodimethane (F4‐TCNQ) is an effective molecular additive to tune the properties of a diketopyrrolopyrrole‐based (DPP‐based) semiconductor. Specifically, the addition of F4‐TCNQ is observed to improve the ductility of the semiconductor by altering the polymer’s microstructures and dynamic motions. As a p‐type dopant additive, F4‐TCNQ can also effectively enhance the mobility and stability of the semiconductor through changing the host polymer’s packing structures and charge trap passivation. Upon fabricating fully stretchable transistors with F4‐TCNQ‐DPP blended semiconductor films, it is observed that the resulting stretchable transistors possess one of the highest initial mobility of 1.03 cm2 V−1 s−1. The fabricated transistors also exhibit higher stability (both bias and environmental) and mobility retention under repeated strain, compared to those without F4‐TCNQ additive. These findings offer a new direction of research on stretchable semiconductors to facilitate future practical applications.
F4‐TCNQ is used as a molecular additive to simultaneously improve mobility, stability, and stretchability of a semiconducting polymer. The additive enhances stretchability via decreasing crystalline order, while stability and mobility are improved by molecular doping. Fully stretchable transistors fabricated with the newly proposed semiconductor/additive blend films exhibit improved initial mobility, bias and environmental stability, and mobility retention under strain. |
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ISSN: | 2199-160X 2199-160X |
DOI: | 10.1002/aelm.202000251 |