Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide

Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective, near-telecom optical interface. However, previous studies were hindere...

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Veröffentlicht in:npj quantum information 2020-01, Vol.6 (1)
Hauptverfasser: Diler, Berk, Whiteley, Samuel J., Anderson, Christopher P., Wolfowicz, Gary, Wesson, Marie E., Bielejec, Edward S., Joseph Heremans, F., Awschalom, David D.
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Sprache:eng
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Zusammenfassung:Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective, near-telecom optical interface. However, previous studies were hindered by material quality resulting in limited coherent control. In this work, we implant Cr into commercial 4H-SiC and show optimal defect activation after annealing above 1600 °C. We measure an ensemble optical hole linewidth of 31 MHz, an order of magnitude improvement compared to as-grown samples. An in-depth exploration of optical and spin dynamics reveals efficient spin polarization, coherent control, and readout with high fidelity (79%). We report T1 times greater than 1 s at cryogenic temperatures (15 K) with a T2* = 317 ns and a T2 = 81 μs, where spin dephasing times are currently limited by spin–spin interactions within the defect ensemble. Our results demonstrate the potential of Cr4+ in SiC as an extrinsic, optically active spin qubit.
ISSN:2056-6387
2056-6387