Reliable techniques for integrated circuit identification and true random number generation using 1.5-transistor flash memory

Flash memory bits, like other integrated circuit (IC) devices, are prone to random variability in their actual versus nominal characteristics. We present the use of 1.5-transistor flash memory cells in physically unclonable functions leveraging their erase speed variability. This type of memory is i...

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Veröffentlicht in:Integration (Amsterdam) 2019-03, Vol.65 (C), p.263-272
Hauptverfasser: Clark, Lawrence T., Adams, James, Holbert, Keith E.
Format: Artikel
Sprache:eng
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Zusammenfassung:Flash memory bits, like other integrated circuit (IC) devices, are prone to random variability in their actual versus nominal characteristics. We present the use of 1.5-transistor flash memory cells in physically unclonable functions leveraging their erase speed variability. This type of memory is interesting for the internet of things due to its wide availability as intellectual property at foundries. Using experimentally measured results, we show simple methods that provide high reliability with no or limited need for helper data and error correction. High quality fingerprints for IC identification are demonstrated. Moreover, techniques to remove systematic variations from the array response are shown, allowing the resulting binary strings to pass all National Institute of Standards and Technology tests for randomness. Consequently, with low complexity helper functions, true random numbers can be readily produced. •1.5 transistor flash memory PUF IC device ID with a simple helper function.•Experimental verification of a 1.5 transistor flash memory based TRNG.•Lightweight helper logic allows the flash TRNG to pass the US NIST randomness tests.
ISSN:0167-9260
1872-7522
DOI:10.1016/j.vlsi.2017.10.001