A gap-protected zero-Hall effect state in the quantum limit of the non-symmorphic metal KHgSb

A recurring theme in topological matter is the protection of unusual electronic states by symmetry, for example, protection of the surface states in Z 2 topological insulators by time-reversal symmetry 1 – 3 . Recently, interest has turned to unusual surface states in the large class of non-symmorph...

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Veröffentlicht in:Nature materials 2019-05, Vol.18 (5), p.443-447
Hauptverfasser: Liang, Sihang, Kushwaha, Satya, Gao, Tong, Hirschberger, Max, Li, Jian, Wang, Zhijun, Stolze, Karoline, Skinner, Brian, Bernevig, B. A., Cava, R. J., Ong, N. P.
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Sprache:eng
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Zusammenfassung:A recurring theme in topological matter is the protection of unusual electronic states by symmetry, for example, protection of the surface states in Z 2 topological insulators by time-reversal symmetry 1 – 3 . Recently, interest has turned to unusual surface states in the large class of non-symmorphic materials 4 – 12 . In particular, KHgSb is predicted to exhibit double quantum spin Hall states 10 . Here we report measurements of the Hall conductivity in KHgSb in a strong magnetic field B . In the quantum limit, the Hall conductivity is observed to fall exponentially to zero, but the diagonal conductivity is finite. A large gap protects this unusual zero-Hall state. We theoretically propose that, in this quantum limit, the chemical potential drops into the bulk gap, intersecting equal numbers of right- and left-moving quantum spin Hall surface modes to produce the zero-Hall state. The zero-Hall state illustrates how topological protection in a non-symmorphic material with glide symmetry may lead to highly unusual transport phenomena. Zero Hall effect is found in the quantum limit of KHgSb. This observation is attributed to counter-propagating double quantum spin Hall states.
ISSN:1476-1122
1476-4660
DOI:10.1038/s41563-019-0303-x