Amorphous sulfide heterostructure precursors prepared by radio frequency sputtering

Two-dimensional sulfides and their heterostructures have emerged as potentially useful materials for technological applications. Controllable self-assembly of interleaved crystalline heterostructures from designed thin-film precursors has been demonstrated in selenide and telluride chemical systems,...

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Veröffentlicht in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2019-09, Vol.37 (5)
Hauptverfasser: Roberts, Dennice M., Perkins, John D., Norman, Andrew G., Stoldt, Conrad R., Zakutayev, Andriy, Bauers, Sage R.
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Sprache:eng
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Zusammenfassung:Two-dimensional sulfides and their heterostructures have emerged as potentially useful materials for technological applications. Controllable self-assembly of interleaved crystalline heterostructures from designed thin-film precursors has been demonstrated in selenide and telluride chemical systems, but not yet in sulfide chemistries. Preparing such amorphous sulfide heterostructure precursors is a necessary first step toward this goal. Here, deposition of thin-film amorphous precursors for layered sulfide heterostructures by RF sputtering is presented on the example of SnS-MoS2. A calibration process specific to the mechanisms of RF sputtering from sulfide and disulfide compound targets is established. Precursor film structure and composition are confirmed via x-ray reflectivity and Rutherford backscattering measurements. Local nanostructure and composition are also examined by electron microscopy and electron energy loss spectroscopy.
ISSN:2166-2746
2166-2754
DOI:10.1116/1.5099502