Effect of Perforation on the Thermal and Electrical Breakdown of Self‐Rolled‐Up Nanomembrane Structures

Strain‐induced self‐rolled‐up membranes (S‐RuM) are structures formed spontaneously by releasing a strained layer or layer stacks from its mechanical support, with unique applications in passive photonics, electronics, and bioengineering. Depending on the thermal properties of the strained layers, these structures can experience various thermally induced deformations. These deformations can be avoided and augmented with the addition of strategically placed perforations in the membrane. This study reports on the use of perforations to modify the thermal effects on strained silicon nitride S‐RuM structures. A programmable fuse with well‐defined thermal threshold, ultrasmall footprint, and 2–3 V voltage rating is demonstrated, which can potentially serve as an on‐chip sensing device for power electronic circuits. This study reports on the fabrication and the thermal effect of perforated silicon‐nitride self‐rolled‐up membrane microtubes. The threshold of thermal deformation of these structures can be augmented with strategically placed perforations. A fuse with an ultra‐small footprint, programmable by perforation density, is presented as a potential on‐chip sensing device.