Electron heating induced by an ac-bias current in the regime of Shubnikov-de Haas oscillation in the high mobility GaAs/Al x Ga 1-x As two-dimensional electron system

The magnetotransport properties of the high mobility GaAs/AlGaAs two-dimensional electron gas systems have been examined to determine the influence of the ac current bias on the carrier temperature. The changes in the line shape of Shubnikov-de Haas oscillations in the longitudinal magnetoresistance...

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Veröffentlicht in:Journal of physics. Condensed matter 2018-08, Vol.30 (31), p.315701
Hauptverfasser: Munasinghe, C Rasadi, Gunawardana, B, Samaraweera, R L, Wang, Z, Nanayakkara, T R, Kriisa, A, Reichl, C, Wegscheider, W, Mani, R G
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Sprache:eng
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Zusammenfassung:The magnetotransport properties of the high mobility GaAs/AlGaAs two-dimensional electron gas systems have been examined to determine the influence of the ac current bias on the carrier temperature. The changes in the line shape of Shubnikov-de Haas oscillations in the longitudinal magnetoresistance ([Formula: see text]) were followed as a function of the ac current bias in the temperature range of [Formula: see text] in order to determine the carrier heating effect due to the ac bias. The lineshape analysis of these oscillations indicates that the carrier temperature of the two-dimensional electron system is linearly proportional to the ac bias current.
ISSN:0953-8984
1361-648X
DOI:10.1088/1361-648X/aace34