Isolation and Characterization of Few-Layer Manganese Thiophosphite

This work reports an experimental study on an antiferromagnetic honeycomb lattice of MnPS3 that couples the valley degree of freedom to a macroscopic antiferromagnetic order. The crystal structure of MnPS3 is identified by high-resolution scanning transmission electron microscopy. Layer-dependent angle-resolved polarized Raman fingerprints of the MnPS3 crystal are obtained, and the Raman peak at 383 cm–1 exhibits 100% polarity. Temperature dependences of anisotropic magnetic susceptibility of the MnPS3 crystal are measured in a superconducting quantum interference device. Anisotropic behaviors of the magnetic moment are explored on the basis of the mean field approximation model. Ambipolar electronic conducting channels in MnPS3 are realized by the liquid gating technique. The conducting channel of MnPS3 offers a platform for exploring the spin/valleytronics and magnetic orders in 2D limitation.