Strain engineering 4H-SiC with ion beams

Single crystals of 4H-SiC irradiated with 900 keV Si and 21 MeV Ni ions separately and sequentially were studied by Rutherford backscattering spectrometry in channeling geometry, single crystal X-ray diffraction, and Raman scattering. SiC irradiated with 900 keV Si ions to a fluence of 6.3 × 1014 io...

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Veröffentlicht in:Appl.Phys.Lett 2019-06, Vol.114 (22)
Hauptverfasser: Zhang, F. X., Tong, Y., Xue, Haizhou, Keum, J. K., Zhang, Yanwen, Boulle, A., Debelle, A., Weber, W. J.
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Sprache:eng
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Zusammenfassung:Single crystals of 4H-SiC irradiated with 900 keV Si and 21 MeV Ni ions separately and sequentially were studied by Rutherford backscattering spectrometry in channeling geometry, single crystal X-ray diffraction, and Raman scattering. SiC irradiated with 900 keV Si ions to a fluence of 6.3 × 1014 ions/cm2 experiences 7.3% strain over the depth of 650 nm. Strain relaxation from ionization-induced annealing was directly observed due to subsequent irradiation with 21 MeV Ni ions to a fluence of 2 × 1014 ions/cm2. These competitive processes suggest the use of ion irradiation to create a specific strain state in 4H-SiC, particularly in films.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5109226