Band alignment at epitaxial SrTiO3–GaAs(001) heterojunction

Band alignment at epitaxial SrTiO3–GaAs(001) heterojunction

Band discontinuities and band bending at the epitaxial SrTiO3∕GaAs(001) interface were investigated using x-ray and ultraviolet photoelectron spectroscopy. Results showed that the epitaxial SrTiO3∕GaAs(001) formed a type II heterojunction with conduction and valence band offsets being 0.6 and 2.5 eV...

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Veröffentlicht in:Applied physics letters 2005-02, Vol.86 (8)
Hauptverfasser: Liang, Y., Curless, J., McCready, D.
Format: Artikel
Sprache:eng
Schlagworte:
ALIGNMENT
ENERGY GAP
FERMI LEVEL
GALLIUM ARSENIDES
HETEROJUNCTIONS
INTERFACES
MATERIALS SCIENCE
PHOTOEMISSION
STRONTIUM OXIDES
TITANIUM OXIDES
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Zusammenfassung:Band discontinuities and band bending at the epitaxial SrTiO3∕GaAs(001) interface were investigated using x-ray and ultraviolet photoelectron spectroscopy. Results showed that the epitaxial SrTiO3∕GaAs(001) formed a type II heterojunction with conduction and valence band offsets being 0.6 and 2.5 eV, respectively, for both n- and p-GaAs(001) substrates. The photoemission results further revealed that Fermi level was unpinned at the epitaxial SrTiO3∕GaAs(001) interface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1871364