Identifying the dominant interstitial complex in dilute GaAsN alloys

Significant composition-dependent incorporation of N into non-substitutional sites is often reported for dilute GaAsN alloys. To distinguish (N-N)As, (N-As)As, and (AsGa-NAs) complexes, we compare Rutherford backscattering spectrometry and nuclear reaction analysis (NRA) spectra with Monte Carlo-Mol...

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Veröffentlicht in:Applied physics letters 2015-11, Vol.107 (22)
Hauptverfasser: Jen, T., Vardar, G., Wang, Y. Q., Goldman, R. S.
Format: Artikel
Sprache:eng
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Zusammenfassung:Significant composition-dependent incorporation of N into non-substitutional sites is often reported for dilute GaAsN alloys. To distinguish (N-N)As, (N-As)As, and (AsGa-NAs) complexes, we compare Rutherford backscattering spectrometry and nuclear reaction analysis (NRA) spectra with Monte Carlo-Molecular Dynamics simulations along the [100], [110], and [111] directions. For the Monte Carlo simulation, we assume that (N-N)As is aligned along the [111] direction, while (N-As)As is aligned along the [010] direction. The measured channeling NRA spectra exhibit the highest (lowest) yield in the [111] ([100]) directions. Similar trends are observed for simulations of (N-As)As, suggesting that (N-As)As is the dominant interstitial complex in dilute GaAsN.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4935857