Detailed carrier recombination in lateral composition modulation structure

Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhance...

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Veröffentlicht in:	Applied physics express 2018-09, Vol.11 (9), p.95801
Hauptverfasser:	Park, Kwangwook, Ravindran, Sooraj, Kang, Seokjin, Min, Jung-Wook, Hwang, Hyeong-Yong, Jho, Young-Dahl, Jo, Yong-Ryun, Kim, Bong-Joong, Kim, Jongmin, Lee, Yong-Tak
Format:	Artikel
Sprache:	eng
Schlagworte:	CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS lateral composition modulation semiconductors superlattices
Online-Zugang:	Volltext
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