Detailed carrier recombination in lateral composition modulation structure

Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhance...

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Veröffentlicht in:	Applied physics express 2018-09, Vol.11 (9), p.95801
Hauptverfasser:	Park, Kwangwook, Ravindran, Sooraj, Kang, Seokjin, Min, Jung-Wook, Hwang, Hyeong-Yong, Jho, Young-Dahl, Jo, Yong-Ryun, Kim, Bong-Joong, Kim, Jongmin, Lee, Yong-Tak
Format:	Artikel
Sprache:	eng
Schlagworte:	CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS lateral composition modulation semiconductors superlattices
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Beschreibung
Zusammenfassung:	Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhanced from 25 to 230 ps for passivated LCM GaInP in comparison with that of bulk GaInP. This is due to the suppressed surface recombination of the irregular and wavy surface of LCM GaInP observed by TEM. Temperature-dependent TR-PL also showed a large decrease in carrier lifetime with an increase in temperature, indicating the dominance of Shockley-Read-Hall recombination due to the nonperiodicity of the LCM structure.
ISSN:	1882-0778 1882-0786
DOI:	10.7567/APEX.11.095801