Detailed carrier recombination in lateral composition modulation structure

Detailed carrier recombination in lateral composition modulation structure

Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhance...

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Veröffentlicht in:Applied physics express 2018-09, Vol.11 (9), p.95801
Hauptverfasser: Park, Kwangwook, Ravindran, Sooraj, Kang, Seokjin, Min, Jung-Wook, Hwang, Hyeong-Yong, Jho, Young-Dahl, Jo, Yong-Ryun, Kim, Bong-Joong, Kim, Jongmin, Lee, Yong-Tak
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CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
lateral composition modulation
semiconductors
superlattices
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container_end_page
container_issue 9
container_start_page 95801
container_title Applied physics express
container_volume 11
creator Park, Kwangwook
Ravindran, Sooraj
Kang, Seokjin
Min, Jung-Wook
Hwang, Hyeong-Yong
Jho, Young-Dahl
Jo, Yong-Ryun
Kim, Bong-Joong
Kim, Jongmin
Lee, Yong-Tak
description Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhanced from 25 to 230 ps for passivated LCM GaInP in comparison with that of bulk GaInP. This is due to the suppressed surface recombination of the irregular and wavy surface of LCM GaInP observed by TEM. Temperature-dependent TR-PL also showed a large decrease in carrier lifetime with an increase in temperature, indicating the dominance of Shockley-Read-Hall recombination due to the nonperiodicity of the LCM structure.
doi_str_mv 10.7567/APEX.11.095801
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fullrecord <record><control><sourceid>iop_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_1475528</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>AP180599</sourcerecordid><originalsourceid>FETCH-LOGICAL-c400t-bd773419efce76e30831891d5a8bead3265a61ecfaf41e9534ed74779045a1c63</originalsourceid><addsrcrecordid>eNp1kE1Lw0AQhhdRsFavnoMnEVJ3mv3KsWj9oqAHBW_LdjPBLWk27G5A_72pKZ70NMPL8w7MQ8g50JnkQl4vXpbvM4AZLbmicEAmoNQ8p1KJw99dqmNyEuOGUsEKEBPydIvJuAarzJoQHIYsoPXbtWtNcr7NXJs1JmEwTTbEnY_uJ976qm9GIqbQ29QHPCVHtWkinu3nlLzdLV9vHvLV8_3jzWKVW0ZpyteVlAWDEmuLUmBBVQGqhIobtUZTFXPBjQC0takZYMkLhpVkUpaUcQNWFFNyMd71MTkdrUtoP6xvW7RJA5Ocz9UAzUbIBh9jwFp3wW1N-NJA9U6X3unSAHrUNRSuxoLznd74PrTDD__Dl3_ApsPPHVTuMd1VdfENtAd5QA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Detailed carrier recombination in lateral composition modulation structure</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Park, Kwangwook ; Ravindran, Sooraj ; Kang, Seokjin ; Min, Jung-Wook ; Hwang, Hyeong-Yong ; Jho, Young-Dahl ; Jo, Yong-Ryun ; Kim, Bong-Joong ; Kim, Jongmin ; Lee, Yong-Tak</creator><creatorcontrib>Park, Kwangwook ; Ravindran, Sooraj ; Kang, Seokjin ; Min, Jung-Wook ; Hwang, Hyeong-Yong ; Jho, Young-Dahl ; Jo, Yong-Ryun ; Kim, Bong-Joong ; Kim, Jongmin ; Lee, Yong-Tak ; National Renewable Energy Lab. (NREL), Golden, CO (United States)</creatorcontrib><description>Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhanced from 25 to 230 ps for passivated LCM GaInP in comparison with that of bulk GaInP. This is due to the suppressed surface recombination of the irregular and wavy surface of LCM GaInP observed by TEM. Temperature-dependent TR-PL also showed a large decrease in carrier lifetime with an increase in temperature, indicating the dominance of Shockley-Read-Hall recombination due to the nonperiodicity of the LCM structure.</description><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.7567/APEX.11.095801</identifier><identifier>CODEN: APEPC4</identifier><language>eng</language><publisher>United States: The Japan Society of Applied Physics</publisher><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; lateral composition modulation ; semiconductors ; superlattices</subject><ispartof>Applied physics express, 2018-09, Vol.11 (9), p.95801</ispartof><rights>2018 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c400t-bd773419efce76e30831891d5a8bead3265a61ecfaf41e9534ed74779045a1c63</citedby><cites>FETCH-LOGICAL-c400t-bd773419efce76e30831891d5a8bead3265a61ecfaf41e9534ed74779045a1c63</cites><orcidid>0000-0002-4600-4600 ; 0000000246004600</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/APEX.11.095801/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>230,314,776,780,881,27901,27902,53821,53868</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/1475528$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Park, Kwangwook</creatorcontrib><creatorcontrib>Ravindran, Sooraj</creatorcontrib><creatorcontrib>Kang, Seokjin</creatorcontrib><creatorcontrib>Min, Jung-Wook</creatorcontrib><creatorcontrib>Hwang, Hyeong-Yong</creatorcontrib><creatorcontrib>Jho, Young-Dahl</creatorcontrib><creatorcontrib>Jo, Yong-Ryun</creatorcontrib><creatorcontrib>Kim, Bong-Joong</creatorcontrib><creatorcontrib>Kim, Jongmin</creatorcontrib><creatorcontrib>Lee, Yong-Tak</creatorcontrib><creatorcontrib>National Renewable Energy Lab. (NREL), Golden, CO (United States)</creatorcontrib><title>Detailed carrier recombination in lateral composition modulation structure</title><title>Applied physics express</title><addtitle>Appl. Phys. Express</addtitle><description>Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhanced from 25 to 230 ps for passivated LCM GaInP in comparison with that of bulk GaInP. This is due to the suppressed surface recombination of the irregular and wavy surface of LCM GaInP observed by TEM. Temperature-dependent TR-PL also showed a large decrease in carrier lifetime with an increase in temperature, indicating the dominance of Shockley-Read-Hall recombination due to the nonperiodicity of the LCM structure.</description><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>lateral composition modulation</subject><subject>semiconductors</subject><subject>superlattices</subject><issn>1882-0778</issn><issn>1882-0786</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kE1Lw0AQhhdRsFavnoMnEVJ3mv3KsWj9oqAHBW_LdjPBLWk27G5A_72pKZ70NMPL8w7MQ8g50JnkQl4vXpbvM4AZLbmicEAmoNQ8p1KJw99dqmNyEuOGUsEKEBPydIvJuAarzJoQHIYsoPXbtWtNcr7NXJs1JmEwTTbEnY_uJ976qm9GIqbQ29QHPCVHtWkinu3nlLzdLV9vHvLV8_3jzWKVW0ZpyteVlAWDEmuLUmBBVQGqhIobtUZTFXPBjQC0takZYMkLhpVkUpaUcQNWFFNyMd71MTkdrUtoP6xvW7RJA5Ocz9UAzUbIBh9jwFp3wW1N-NJA9U6X3unSAHrUNRSuxoLznd74PrTDD__Dl3_ApsPPHVTuMd1VdfENtAd5QA</recordid><startdate>20180901</startdate><enddate>20180901</enddate><creator>Park, Kwangwook</creator><creator>Ravindran, Sooraj</creator><creator>Kang, Seokjin</creator><creator>Min, Jung-Wook</creator><creator>Hwang, Hyeong-Yong</creator><creator>Jho, Young-Dahl</creator><creator>Jo, Yong-Ryun</creator><creator>Kim, Bong-Joong</creator><creator>Kim, Jongmin</creator><creator>Lee, Yong-Tak</creator><general>The Japan Society of Applied Physics</general><general>Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0002-4600-4600</orcidid><orcidid>https://orcid.org/0000000246004600</orcidid></search><sort><creationdate>20180901</creationdate><title>Detailed carrier recombination in lateral composition modulation structure</title><author>Park, Kwangwook ; Ravindran, Sooraj ; Kang, Seokjin ; Min, Jung-Wook ; Hwang, Hyeong-Yong ; Jho, Young-Dahl ; Jo, Yong-Ryun ; Kim, Bong-Joong ; Kim, Jongmin ; Lee, Yong-Tak</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c400t-bd773419efce76e30831891d5a8bead3265a61ecfaf41e9534ed74779045a1c63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>lateral composition modulation</topic><topic>semiconductors</topic><topic>superlattices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Kwangwook</creatorcontrib><creatorcontrib>Ravindran, Sooraj</creatorcontrib><creatorcontrib>Kang, Seokjin</creatorcontrib><creatorcontrib>Min, Jung-Wook</creatorcontrib><creatorcontrib>Hwang, Hyeong-Yong</creatorcontrib><creatorcontrib>Jho, Young-Dahl</creatorcontrib><creatorcontrib>Jo, Yong-Ryun</creatorcontrib><creatorcontrib>Kim, Bong-Joong</creatorcontrib><creatorcontrib>Kim, Jongmin</creatorcontrib><creatorcontrib>Lee, Yong-Tak</creatorcontrib><creatorcontrib>National Renewable Energy Lab. (NREL), Golden, CO (United States)</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Kwangwook</au><au>Ravindran, Sooraj</au><au>Kang, Seokjin</au><au>Min, Jung-Wook</au><au>Hwang, Hyeong-Yong</au><au>Jho, Young-Dahl</au><au>Jo, Yong-Ryun</au><au>Kim, Bong-Joong</au><au>Kim, Jongmin</au><au>Lee, Yong-Tak</au><aucorp>National Renewable Energy Lab. (NREL), Golden, CO (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Detailed carrier recombination in lateral composition modulation structure</atitle><jtitle>Applied physics express</jtitle><addtitle>Appl. Phys. Express</addtitle><date>2018-09-01</date><risdate>2018</risdate><volume>11</volume><issue>9</issue><spage>95801</spage><pages>95801-</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><coden>APEPC4</coden><abstract>Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhanced from 25 to 230 ps for passivated LCM GaInP in comparison with that of bulk GaInP. This is due to the suppressed surface recombination of the irregular and wavy surface of LCM GaInP observed by TEM. Temperature-dependent TR-PL also showed a large decrease in carrier lifetime with an increase in temperature, indicating the dominance of Shockley-Read-Hall recombination due to the nonperiodicity of the LCM structure.</abstract><cop>United States</cop><pub>The Japan Society of Applied Physics</pub><doi>10.7567/APEX.11.095801</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-4600-4600</orcidid><orcidid>https://orcid.org/0000000246004600</orcidid></addata></record>
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subjects CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
lateral composition modulation
semiconductors
superlattices
title Detailed carrier recombination in lateral composition modulation structure
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T14%3A41%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Detailed%20carrier%20recombination%20in%20lateral%20composition%20modulation%20structure&rft.jtitle=Applied%20physics%20express&rft.au=Park,%20Kwangwook&rft.aucorp=National%20Renewable%20Energy%20Lab.%20(NREL),%20Golden,%20CO%20(United%20States)&rft.date=2018-09-01&rft.volume=11&rft.issue=9&rft.spage=95801&rft.pages=95801-&rft.issn=1882-0778&rft.eissn=1882-0786&rft.coden=APEPC4&rft_id=info:doi/10.7567/APEX.11.095801&rft_dat=%3Ciop_osti_%3EAP180599%3C/iop_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true