Study of silicon photomultiplier performance in external electric fields

We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon det...

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Veröffentlicht in:	Journal of instrumentation 2018-09, Vol.13 (9), p.T09006-T09006
Hauptverfasser:	Sun, X.L., Tolba, T., Cao, G.F., Lv, P., Wen, L.J., Odian, A., Vachon, F., Alamre, A., Albert, J.B., Anton, G., Arnquist, I.J., Badhrees, I., Barbeau, P.S., Beck, D., Belov, V., Bhatta, T., Bourque, F., Brodsky, J. P., Brown, E., Brunner, T., Burenkov, A., Cao, L., Cen, W.R., Chambers, C., Charlebois, S.A., Chiu, M., Cleveland, B., Coon, M., Côté, M., Craycraft, A., Cree, W., Dalmasson, J., Daniels, T., Darroch, L., Daugherty, S.J., Daughhetee, J., Delaquis, S., Mesrobian-Kabakian, A. Der, DeVoe, R., Dilling, J., Ding, Y.Y., Dolinski, M.J., Dragone, A., Echevers, J., Fabris, L., Fairbank, D., Fairbank, W., Farine, J., Feyzbakhsh, S., Fierlinger, P., Fontaine, R., Fudenberg, D., Gallina, G., Giacomini, G., Gornea, R., Gratta, G., Hansen, E.V., Harris, D., Heffner, M., Hoppe, E. W., Hößl, J., House, A., Hufschmidt, P., Hughes, M., Ito, Y., Iverson, A., Jamil, A., Jessiman, C., Jewell, M.J., Jiang, X.S., Karelin, A., Kaufman, L.J., Kodroff, D., Koffas, T., Kravitz, S., Krücken, R., Kuchenkov, A., Kumar, K.S., Lan, Y., Larson, A., Leonard, D.S., Li, G., Li, S., Li, Z., Licciardi, C., Lin, Y.H., MacLellan, R., Michel, T., Moe, M., Mong, B., Moore, D.C., Murray, K., Newby, R.J., Ning, Z., Njoya, O., Nolet, F., Nusair, O., Odgers, K., Oriunno, M., Orrell, J.L.
Format:	Artikel
Sprache:	eng
Schlagworte:	APDs CCDs Cryogenic detectors Double-beta decay detectors EBCCDs Electric field strength Electric fields EMCCDs etc G-APDs MATERIALS SCIENCE Noble liquid detectors (scintillation, ionization, double-phase) Photomultiplier tubes Photon detectors for UV Si-PMTs Silicon visible and IR photons (solid-state) (PIN diodes
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Beschreibung
Zusammenfassung:	We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.
ISSN:	1748-0221 1748-0221
DOI:	10.1088/1748-0221/13/09/T09006