Evidence of Tailoring the Interfacial Chemical Composition in Normal Structure Hybrid Organohalide Perovskites by a Self-Assembled Monolayer

Current–voltage hysteresis is a major issue for normal architecture organo-halide perovskite solar cells. In this manuscript we reveal a several-angstrom thick methylammonium iodide-rich interface between the perovskite and the metal oxide. Surface functionalization via self-assembled monolayers all...

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Veröffentlicht in:ACS applied materials & interfaces 2018-02, Vol.10 (6), p.5511-5518
Hauptverfasser: Will, Johannes, Hou, Yi, Scheiner, Simon, Pinkert, Ute, Hermes, Ilka M, Weber, Stefan A.L, Hirsch, Andreas, Halik, Marcus, Brabec, Christoph, Unruh, Tobias
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Sprache:eng
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Zusammenfassung:Current–voltage hysteresis is a major issue for normal architecture organo-halide perovskite solar cells. In this manuscript we reveal a several-angstrom thick methylammonium iodide-rich interface between the perovskite and the metal oxide. Surface functionalization via self-assembled monolayers allowed us to control the composition of the interface monolayer from Pb poor to Pb rich, which, in parallel, suppresses hysteresis in perovskite solar cells. The bulk of the perovskite films is not affected by the interface engineering and remains highly crystalline in the surface-normal direction over the whole film thickness. The subnanometer structural modifications of the buried interface were revealed by X-ray reflectivity, which is most sensitive to monitor changes in the mass density of only several-angstrom thin interfacial layers as a function of substrate functionalization. From Kelvin probe force microscopy study on a solar cell cross section, we further demonstrate local variations of the potential on different electron-transporting layers within a solar cell. On the basis of these findings, we present a unifying model explaining hysteresis in perovskite solar cells, giving an insight into one crucial aspect of hysteresis for the first time and paving way for new strategies in the field of perovskite-based opto-electronic devices.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.7b15904