A CMOS Compatible, Forming Free TaOx ReRAM

A CMOS Compatible, Forming Free TaOx ReRAM

Resistive random access memory (ReRAM) has become a promising candidate for next-generation high-performance non-volatile memory that operates by electrically tuning resistance states via modulating vacancy concentrations. We demonstrate a wafer-scale process for resistive switching in tantalum oxid...

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Veröffentlicht in:ECS transactions 2013-08, Vol.58 (5), p.59-65
Hauptverfasser: Lohn, Andrew J, Stevens, James E, Mickel, Patrick R, Hughart, David R, Marinella, Matthew J.
Format: Artikel
Sprache:eng
Schlagworte:
MATHEMATICS AND COMPUTING
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Zusammenfassung:Resistive random access memory (ReRAM) has become a promising candidate for next-generation high-performance non-volatile memory that operates by electrically tuning resistance states via modulating vacancy concentrations. We demonstrate a wafer-scale process for resistive switching in tantalum oxide that is completely CMOS compatible. The resulting devices are forming-free and with greater than 1x105 cycle endurance.
ISSN:1938-5862
1938-6737
1938-6737
DOI:10.1149/05805.0059ecst