Molecular beam epitaxy growth of SnO2 using a tin chemical precursor
The authors report on the development of a molecular beam epitaxy approach for atomic layer controlled growth of phase-pure, single-crystalline epitaxial SnO2 films with scalable growth rates using a highly volatile precursor (tetraethyltin) for tin and rf-oxygen plasma for oxygen. Smooth, epitaxial...
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Veröffentlicht in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2015-03, Vol.33 (2) |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The authors report on the development of a molecular beam epitaxy approach for atomic layer controlled growth of phase-pure, single-crystalline epitaxial SnO2 films with scalable growth rates using a highly volatile precursor (tetraethyltin) for tin and rf-oxygen plasma for oxygen. Smooth, epitaxial SnO2 (101) films on r-sapphire (101¯2) substrates were grown as a function of tin precursor flux and substrate temperatures between 300 and 900 °C. Three distinct growth regimes were identified where SnO2 films grew in a reaction-, flux-, and desorption-limited mode, respectively, with increasing substrate temperature. In particular, with increasing tin flux, the growth rates were found to increase and then saturate indicating any excess tin precursor desorbs above a critical beam equivalent pressure of tin precursor. Important implications of growth kinetic behaviors on the self-regulating stoichiometric growth of perovskite stannates are discussed. |
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ISSN: | 0734-2101 1520-8559 |
DOI: | 10.1116/1.4913294 |