Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

This paper studies the key parameters affecting on-resistance and current crowding in quasi-vertical GaN power devices by experiment and simulation. The current distribution in the drift region, n−-GaN, was found to be mainly determined by the sheet resistance of the current spreading layer, n+-GaN....

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Veröffentlicht in:	Applied physics letters 2017-10, Vol.111 (16)
Hauptverfasser:	Zhang, Yuhao, Sun, Min, Piedra, Daniel, Hennig, Jonas, Dadgar, Armin, Palacios, Tomás
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Crowding Current distribution Diodes Drift Electrical resistivity Electronic devices Gallium nitrides Spreading
Online-Zugang:	Volltext
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