Total Ionizing Dose (TID) Effects in GaAs MOSFETs With La-Based Epitaxial Gate Dielectrics

Total Ionizing Dose (TID) Effects in GaAs MOSFETs With La-Based Epitaxial Gate Dielectrics

Epitaxially grown La-based oxide has shown promise as a gate dielectric for GaAs substrate materials with a low interface trap density in the mid to low 10 11 cm -2 eV -1 range. Total ionizing dose (TID) effects have been studied on GaAs MOSFETs with Al 2 O 3 /La 2 O 3 and Al 2 O 3 /La 1.8 Y 0.2 O 3...

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Veröffentlicht in:IEEE transactions on nuclear science 2017-01, Vol.64 (1), p.164-169
Hauptverfasser: Shufeng Ren, Bhuiyan, Maruf A., Jingyun Zhang, Xiabing Lou, Mengwei Si, Xian Gong, Rong Jiang, Kai Ni, Xin Wan, En Xia Zhang, Gordon, Roy G., Reed, Robert A., Fleetwood, Daniel M., Ye, Peide, Ma, T. P.
Format: Artikel
Sprache:eng
Schlagworte:
AC transconductance dispersion method (ACGD)
Aluminum oxide
atomic layer epitaxy
border traps
Dielectrics
Electron traps
Epitaxial growth
GaAs
Gallium arsenide
Lanthanum oxides
La₂O
Logic gates
MOSFET
MOSFETs
oxide traps
Oxides
solar (photovoltaic), solar (fuels), solid state lighting, phonons, thermoelectric, hydrogen and fuel cells, defects, charge transport, optics, materials and chemistry by design, synthesis (novel materials)
Substrates
Transconductance
Trapping
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Zusammenfassung:Epitaxially grown La-based oxide has shown promise as a gate dielectric for GaAs substrate materials with a low interface trap density in the mid to low 10 11 cm -2 eV -1 range. Total ionizing dose (TID) effects have been studied on GaAs MOSFETs with Al 2 O 3 /La 2 O 3 and Al 2 O 3 /La 1.8 Y 0.2 O 3 gate oxides. Charge trapping mechanisms in GaAs MOSFETs are studied by the AC transconductance dispersion method. Al 2 O 3 /La 2 O 3 gated devices show a combination of electron and hole trapping, whereas Al 2 O 3 /La 1.8 Y 0.2 O 3 gated devices show primarily hole trapping.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2016.2620993