Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe 1‐ x S x by Iodine Doping
Iodine‐doped n‐type SnSe polycrystalline by melting and hot pressing is prepared. The prepared material is anisotropic with a peak ZT of ≈0.8 at about 773 K measured along the hot pressing direction. This is the first report on thermoelectric properties of n‐type Sn chalcogenide alloys. With increas...
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| Veröffentlicht in: | Advanced energy materials 2015-06, Vol.5 (12) |
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| container_title | Advanced energy materials |
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| creator | Zhang, Qian Chere, Eyob Kebede Sun, Jingying Cao, Feng Dahal, Keshab Chen, Shuo Chen, Gang Ren, Zhifeng |
| description | Iodine‐doped n‐type SnSe polycrystalline by melting and hot pressing is prepared. The prepared material is anisotropic with a peak
ZT
of ≈0.8 at about 773 K measured along the hot pressing direction. This is the first report on thermoelectric properties of n‐type Sn chalcogenide alloys. With increasing content of iodine, the carrier concentration changed from 2.3 × 10
17
cm
−3
(p‐type) to 5.0 × 10
15
cm
−3
(n‐type) then to 2.0 × 10
17
cm
−3
(n‐type). The decent
ZT
is mainly attributed to the intrinsically low thermal conductivity due to the high anharmonicity of the chemical bonds like those in p‐type SnSe. By alloying with 10 at% SnS, even lower thermal conductivity and an enhanced Seebeck coefficient were achieved, leading to an increased
ZT
of ≈1.0 at about 773 K measured also along the hot pressing direction. |
| doi_str_mv | 10.1002/aenm.201500360 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_1387039</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1002_aenm_201500360</sourcerecordid><originalsourceid>FETCH-LOGICAL-c181t-6a29c5fc4b928270789a68c8a9710f754e47d97e01f09af5e79ffe57320cc653</originalsourceid><addsrcrecordid>eNo9kM9KAzEQh4MoWLRXz8H71slmd5Mcpf4rFCxs70uaTuzKNlmSCO7NR_AZfRK3VjowzMD3Y2A-Qm4YzBhAfqfR7Wc5sBKAV3BGJqxiRVbJAs5PO88vyTTGdxirUAw4nxBdp49ti5F6R9c7DHuPHZoUWkNXwfcY0h-01P18faehR7ry3WDCEJPuutYhrV2NlI2UftJ67M1AF357IA--b93bNbmwuos4_Z9XZP30uJ6_ZMvX58X8fpkZJlnKKp0rU1pTbFQucwFCKl1JI7USDKwoCyzEVgkEZkFpW6JQ1mIpeA7GVCW_IrfHsz6mtommTWh2xjs3ftMwLgVwNYZmx5AJPsaAtulDu9dhaBg0B4_NwWNz8sh_AXzuZ0o</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe 1‐ x S x by Iodine Doping</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Zhang, Qian ; Chere, Eyob Kebede ; Sun, Jingying ; Cao, Feng ; Dahal, Keshab ; Chen, Shuo ; Chen, Gang ; Ren, Zhifeng</creator><creatorcontrib>Zhang, Qian ; Chere, Eyob Kebede ; Sun, Jingying ; Cao, Feng ; Dahal, Keshab ; Chen, Shuo ; Chen, Gang ; Ren, Zhifeng ; Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)</creatorcontrib><description>Iodine‐doped n‐type SnSe polycrystalline by melting and hot pressing is prepared. The prepared material is anisotropic with a peak
ZT
of ≈0.8 at about 773 K measured along the hot pressing direction. This is the first report on thermoelectric properties of n‐type Sn chalcogenide alloys. With increasing content of iodine, the carrier concentration changed from 2.3 × 10
17
cm
−3
(p‐type) to 5.0 × 10
15
cm
−3
(n‐type) then to 2.0 × 10
17
cm
−3
(n‐type). The decent
ZT
is mainly attributed to the intrinsically low thermal conductivity due to the high anharmonicity of the chemical bonds like those in p‐type SnSe. By alloying with 10 at% SnS, even lower thermal conductivity and an enhanced Seebeck coefficient were achieved, leading to an increased
ZT
of ≈1.0 at about 773 K measured also along the hot pressing direction.</description><identifier>ISSN: 1614-6832</identifier><identifier>EISSN: 1614-6840</identifier><identifier>DOI: 10.1002/aenm.201500360</identifier><language>eng</language><publisher>United States: Wiley</publisher><subject>MATERIALS SCIENCE ; solar (photovoltaic), solar (thermal), solid state lighting, phonons, thermal conductivity, thermoelectric, defects, mechanical behavior, charge transport, spin dynamics, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)</subject><ispartof>Advanced energy materials, 2015-06, Vol.5 (12)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c181t-6a29c5fc4b928270789a68c8a9710f754e47d97e01f09af5e79ffe57320cc653</citedby><cites>FETCH-LOGICAL-c181t-6a29c5fc4b928270789a68c8a9710f754e47d97e01f09af5e79ffe57320cc653</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27903,27904</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/1387039$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhang, Qian</creatorcontrib><creatorcontrib>Chere, Eyob Kebede</creatorcontrib><creatorcontrib>Sun, Jingying</creatorcontrib><creatorcontrib>Cao, Feng</creatorcontrib><creatorcontrib>Dahal, Keshab</creatorcontrib><creatorcontrib>Chen, Shuo</creatorcontrib><creatorcontrib>Chen, Gang</creatorcontrib><creatorcontrib>Ren, Zhifeng</creatorcontrib><creatorcontrib>Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)</creatorcontrib><title>Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe 1‐ x S x by Iodine Doping</title><title>Advanced energy materials</title><description>Iodine‐doped n‐type SnSe polycrystalline by melting and hot pressing is prepared. The prepared material is anisotropic with a peak
ZT
of ≈0.8 at about 773 K measured along the hot pressing direction. This is the first report on thermoelectric properties of n‐type Sn chalcogenide alloys. With increasing content of iodine, the carrier concentration changed from 2.3 × 10
17
cm
−3
(p‐type) to 5.0 × 10
15
cm
−3
(n‐type) then to 2.0 × 10
17
cm
−3
(n‐type). The decent
ZT
is mainly attributed to the intrinsically low thermal conductivity due to the high anharmonicity of the chemical bonds like those in p‐type SnSe. By alloying with 10 at% SnS, even lower thermal conductivity and an enhanced Seebeck coefficient were achieved, leading to an increased
ZT
of ≈1.0 at about 773 K measured also along the hot pressing direction.</description><subject>MATERIALS SCIENCE</subject><subject>solar (photovoltaic), solar (thermal), solid state lighting, phonons, thermal conductivity, thermoelectric, defects, mechanical behavior, charge transport, spin dynamics, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)</subject><issn>1614-6832</issn><issn>1614-6840</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNo9kM9KAzEQh4MoWLRXz8H71slmd5Mcpf4rFCxs70uaTuzKNlmSCO7NR_AZfRK3VjowzMD3Y2A-Qm4YzBhAfqfR7Wc5sBKAV3BGJqxiRVbJAs5PO88vyTTGdxirUAw4nxBdp49ti5F6R9c7DHuPHZoUWkNXwfcY0h-01P18faehR7ry3WDCEJPuutYhrV2NlI2UftJ67M1AF357IA--b93bNbmwuos4_Z9XZP30uJ6_ZMvX58X8fpkZJlnKKp0rU1pTbFQucwFCKl1JI7USDKwoCyzEVgkEZkFpW6JQ1mIpeA7GVCW_IrfHsz6mtommTWh2xjs3ftMwLgVwNYZmx5AJPsaAtulDu9dhaBg0B4_NwWNz8sh_AXzuZ0o</recordid><startdate>201506</startdate><enddate>201506</enddate><creator>Zhang, Qian</creator><creator>Chere, Eyob Kebede</creator><creator>Sun, Jingying</creator><creator>Cao, Feng</creator><creator>Dahal, Keshab</creator><creator>Chen, Shuo</creator><creator>Chen, Gang</creator><creator>Ren, Zhifeng</creator><general>Wiley</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>201506</creationdate><title>Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe 1‐ x S x by Iodine Doping</title><author>Zhang, Qian ; Chere, Eyob Kebede ; Sun, Jingying ; Cao, Feng ; Dahal, Keshab ; Chen, Shuo ; Chen, Gang ; Ren, Zhifeng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c181t-6a29c5fc4b928270789a68c8a9710f754e47d97e01f09af5e79ffe57320cc653</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>MATERIALS SCIENCE</topic><topic>solar (photovoltaic), solar (thermal), solid state lighting, phonons, thermal conductivity, thermoelectric, defects, mechanical behavior, charge transport, spin dynamics, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Qian</creatorcontrib><creatorcontrib>Chere, Eyob Kebede</creatorcontrib><creatorcontrib>Sun, Jingying</creatorcontrib><creatorcontrib>Cao, Feng</creatorcontrib><creatorcontrib>Dahal, Keshab</creatorcontrib><creatorcontrib>Chen, Shuo</creatorcontrib><creatorcontrib>Chen, Gang</creatorcontrib><creatorcontrib>Ren, Zhifeng</creatorcontrib><creatorcontrib>Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Advanced energy materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Qian</au><au>Chere, Eyob Kebede</au><au>Sun, Jingying</au><au>Cao, Feng</au><au>Dahal, Keshab</au><au>Chen, Shuo</au><au>Chen, Gang</au><au>Ren, Zhifeng</au><aucorp>Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe 1‐ x S x by Iodine Doping</atitle><jtitle>Advanced energy materials</jtitle><date>2015-06</date><risdate>2015</risdate><volume>5</volume><issue>12</issue><issn>1614-6832</issn><eissn>1614-6840</eissn><abstract>Iodine‐doped n‐type SnSe polycrystalline by melting and hot pressing is prepared. The prepared material is anisotropic with a peak
ZT
of ≈0.8 at about 773 K measured along the hot pressing direction. This is the first report on thermoelectric properties of n‐type Sn chalcogenide alloys. With increasing content of iodine, the carrier concentration changed from 2.3 × 10
17
cm
−3
(p‐type) to 5.0 × 10
15
cm
−3
(n‐type) then to 2.0 × 10
17
cm
−3
(n‐type). The decent
ZT
is mainly attributed to the intrinsically low thermal conductivity due to the high anharmonicity of the chemical bonds like those in p‐type SnSe. By alloying with 10 at% SnS, even lower thermal conductivity and an enhanced Seebeck coefficient were achieved, leading to an increased
ZT
of ≈1.0 at about 773 K measured also along the hot pressing direction.</abstract><cop>United States</cop><pub>Wiley</pub><doi>10.1002/aenm.201500360</doi></addata></record> |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | MATERIALS SCIENCE solar (photovoltaic), solar (thermal), solid state lighting, phonons, thermal conductivity, thermoelectric, defects, mechanical behavior, charge transport, spin dynamics, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing) |
| title | Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe 1‐ x S x by Iodine Doping |
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