Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe 1‐ x S x by Iodine Doping
Iodine‐doped n‐type SnSe polycrystalline by melting and hot pressing is prepared. The prepared material is anisotropic with a peak ZT of ≈0.8 at about 773 K measured along the hot pressing direction. This is the first report on thermoelectric properties of n‐type Sn chalcogenide alloys. With increas...
Gespeichert in:
Veröffentlicht in: | Advanced energy materials 2015-06, Vol.5 (12) |
---|---|
Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Iodine‐doped n‐type SnSe polycrystalline by melting and hot pressing is prepared. The prepared material is anisotropic with a peak
ZT
of ≈0.8 at about 773 K measured along the hot pressing direction. This is the first report on thermoelectric properties of n‐type Sn chalcogenide alloys. With increasing content of iodine, the carrier concentration changed from 2.3 × 10
17
cm
−3
(p‐type) to 5.0 × 10
15
cm
−3
(n‐type) then to 2.0 × 10
17
cm
−3
(n‐type). The decent
ZT
is mainly attributed to the intrinsically low thermal conductivity due to the high anharmonicity of the chemical bonds like those in p‐type SnSe. By alloying with 10 at% SnS, even lower thermal conductivity and an enhanced Seebeck coefficient were achieved, leading to an increased
ZT
of ≈1.0 at about 773 K measured also along the hot pressing direction. |
---|---|
ISSN: | 1614-6832 1614-6840 |
DOI: | 10.1002/aenm.201500360 |