Coupled Lattice Polarization and Ferromagnetism in Multiferroic NiTiO 3 Thin Films

Polarization-induced weak ferromagnetism (WFM) was demonstrated a few years back in LiNbO3-type compounds, MTiO3 (M = Fe, Mn, Ni). Although the coexistence of ferroelectric polarization and ferromagnetism has been demonstrated in this rare multiferroic family before, first in bulk FeTiO3, then in th...

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Veröffentlicht in:ACS applied materials & interfaces 2017-06, Vol.9 (26)
Hauptverfasser: Varga, Tamas, Droubay, Timothy C., Kovarik, Libor, Nandasiri, Manjula I., Shutthanandan, Vaithiyalingam, Hu, Dehong, Kim, Bumsoo, Jeon, Seokwoo, Hong, Seungbum, Li, Yulan, Chambers, Scott A.
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Sprache:eng
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Zusammenfassung:Polarization-induced weak ferromagnetism (WFM) was demonstrated a few years back in LiNbO3-type compounds, MTiO3 (M = Fe, Mn, Ni). Although the coexistence of ferroelectric polarization and ferromagnetism has been demonstrated in this rare multiferroic family before, first in bulk FeTiO3, then in thin-film NiTiO3, the coupling of the two order parameters has not been confirmed Here, we report the stabilization of polar, ferromagnetic NiTiO3 by oxide epitaxy on a LiNbO3 substrate utilizing tensile strain and demonstrate the theoretically predicted coupling between its polarization and ferromagnetism by X-ray magnetic circular dichroism under applied fields. The experimentally observed direction of ferroic ordering in the film is supported by simulations using the phase-field approach. Our work validates symmetry-based criteria and first-principles calculations of the coexistence of ferroelectricity and WFM in MTiO3 transition metal titanates crystallizing in the LiNbO3 structure. It also demonstrates the applicability of epitaxial strain as a viable alternative to high-pressure crystal growth to stabilize metastable materials and a valuable tuning parameter to simultaneously control two ferroic order parameters to create a multiferroic. Multiferroic NiTiO3 has potential applications in spintronics where ferroic switching is used, such as new four-stage memories and electromagnetic switches.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.7b04481