Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures

Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures

Low‐voltage complementary circuits comprising n‐type and p‐type van der Waals heterojunction vertical field‐effect transistors (VFETs) are demonstrated. The resulting VFETs possess high on‐state current densities (>3000 A cm−2) and on/off current ratios (>104) in a narrow voltage window (...

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Veröffentlicht in:Advanced materials (Weinheim) 2016-05, Vol.28 (19), p.3742-3748
Hauptverfasser: Choi, Yongsuk, Kang, Junmo, Jariwala, Deep, Kang, Moon Sung, Marks, Tobin J., Hersam, Mark C., Cho, Jeong Ho
Format: Artikel
Sprache:eng
Schlagworte:
Circuits
Current density
Electric potential
Electronics
ENGINEERING
Field effect transistors
graphene
Heterojunctions
Heterostructures
ion gels
low power
Materials science
Schottky barrier
Semiconductor devices
Transistors
transition-metal dichalcogenides
vertical transistors
Voltage
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Zusammenfassung:Low‐voltage complementary circuits comprising n‐type and p‐type van der Waals heterojunction vertical field‐effect transistors (VFETs) are demonstrated. The resulting VFETs possess high on‐state current densities (>3000 A cm−2) and on/off current ratios (>104) in a narrow voltage window (
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201506450