The p-type Mg 2 Li x Si 0.4 Sn 0.6 thermoelectric materials synthesized by a B 2 O 3 encapsulation method using Li 2 CO 3 as the doping agent

This paper presents a facile synthetic procedure for p-type Mg 2 Si 0.4 Sn 0.6 thermoelectric material. The B 2 O 3 encapsulation method was used for synthesis, and Li 2 CO 3 was used as the doping agent. These samples showed electrical conductivities and Seebeck coefficients comparable to samples d...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2016, Vol.4 (5), p.929-934
Hauptverfasser: Gao, Peng, Davis, Joshua D., Poltavets, Viktor V., Hogan, Timothy P.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This paper presents a facile synthetic procedure for p-type Mg 2 Si 0.4 Sn 0.6 thermoelectric material. The B 2 O 3 encapsulation method was used for synthesis, and Li 2 CO 3 was used as the doping agent. These samples showed electrical conductivities and Seebeck coefficients comparable to samples doped with pure Li, but the MgO produced during the carbonate reaction had significant influence on the lattice thermal conductivity of the materials. A peak ZT ∼ 0.7 was obtained in the Mg 2 Li 0.025 Si 0.4 Sn 0.6 sample.
ISSN:2050-7526
2050-7534
DOI:10.1039/C5TC03692E